New packaging method of field emission display using silicon-to-ITO coated glass bonding

Jee Won Jeong; Byeong Kwon Ju; Woo Beom Choi; Duck Jung Lee; Yun Hi Lee; Nam Yang Lee; Seong Jae Jung; Doo Jin Choi; Myung Hwan Oh

New packaging method of field emission display using silicon-to-ITO coated glass bonding

Jee Won Jeong, Byeong Kwon Ju, Woo Beom Choi, Duck Jung Lee, Yun Hi Lee, Nam Yang Lee, Seong Jae Jung, Doo Jin Choi, Myung Hwan Oh

Department of Materials Science and Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Silicon to In₂O₃:Sn (ITO) coated glass bonding has been developed for packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on a processing and results for silicon to ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. Silicon to ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with an applied voltages from 140 V_DC to 220 V_DC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 V_DC in 320 °C. In order to study the role of the lithium ions in bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.

Original language	English
Pages	711-715
Number of pages	5
Publication status	Published - 1997
Event	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: 1997 Aug 17 → 1997 Aug 21

Other

Other	Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
City	Kyongju, Korea
Period	97/8/17 → 97/8/21

All Science Journal Classification (ASJC) codes

Surfaces and Interfaces

Cite this

@conference{e40ff23e50294f598ad03f792e1695b3,

title = "New packaging method of field emission display using silicon-to-ITO coated glass bonding",

abstract = "Silicon to In2O3:Sn (ITO) coated glass bonding has been developed for packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on a processing and results for silicon to ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. Silicon to ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with an applied voltages from 140 VDC to 220 VDC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 VDC in 320 °C. In order to study the role of the lithium ions in bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.",

author = "Jeong, {Jee Won} and Ju, {Byeong Kwon} and Choi, {Woo Beom} and Lee, {Duck Jung} and Lee, {Yun Hi} and Lee, {Nam Yang} and Jung, {Seong Jae} and Choi, {Doo Jin} and Oh, {Myung Hwan}",

year = "1997",

language = "English",

pages = "711--715",

note = "Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 ; Conference date: 17-08-1997 Through 21-08-1997",

}

TY - CONF

T1 - New packaging method of field emission display using silicon-to-ITO coated glass bonding

AU - Jeong, Jee Won

AU - Ju, Byeong Kwon

AU - Choi, Woo Beom

AU - Lee, Duck Jung

AU - Lee, Yun Hi

AU - Lee, Nam Yang

AU - Jung, Seong Jae

AU - Choi, Doo Jin

AU - Oh, Myung Hwan

PY - 1997

Y1 - 1997

N2 - Silicon to In2O3:Sn (ITO) coated glass bonding has been developed for packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on a processing and results for silicon to ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. Silicon to ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with an applied voltages from 140 VDC to 220 VDC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 VDC in 320 °C. In order to study the role of the lithium ions in bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.

AB - Silicon to In2O3:Sn (ITO) coated glass bonding has been developed for packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on a processing and results for silicon to ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. Silicon to ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with an applied voltages from 140 VDC to 220 VDC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 VDC in 320 °C. In order to study the role of the lithium ions in bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.

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UR - http://www.scopus.com/inward/citedby.url?scp=0031364502&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031364502

SP - 711

EP - 715

T2 - Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97

Y2 - 17 August 1997 through 21 August 1997

ER -

New packaging method of field emission display using silicon-to-ITO coated glass bonding

Abstract

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