New modeling of switching devices considering power loss in electromagnetic transients program simulation

Seung Tak Kim, Jung Wook Park, Seung Mook Baek

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


This paper presents the modeling of insulated-gate bipolar transistor (IGBT) in electromagnetic transients program (EMTP) simulation for the reliable calculation of switching and conduction losses. The conventional approach considering the physical property of switching devices requires many attribute parameters and large computation efforts. In contrast, the proposed method uses the curve fitting and interpolation techniques based on typical switching waveforms and a userdefined component with variable resistances to capture the dynamic characteristics of IGBTs. Therefore, the simulation time can be efficiently reduced without losing the accuracy while avoiding the extremely small time step, which is required in simulation by the conventional method. The EMTP based simulation includes turn-on and turn-off transients of IGBT, saturation state, forward voltage of free-wheeling diode, and reverse recovery characteristics, etc. The effectiveness of proposed modeling for the EMTP simulation is verified by the comparison with experimental results obtained from practical implementation in hardware.

Original languageEnglish
Pages (from-to)592-601
Number of pages10
JournalJournal of Electrical Engineering and Technology
Issue number3
Publication statusPublished - 2016 May

Bibliographical note

Publisher Copyright:
© The Korean Institute of Electrical Engineers.

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


Dive into the research topics of 'New modeling of switching devices considering power loss in electromagnetic transients program simulation'. Together they form a unique fingerprint.

Cite this