New hot-carrier injection mechanism at source side in nanoscale floating-body MOSFETs

J. W. Yang; H. R. Harris; G. Bersuker; C. Y. Kang; J. Oh; B. H. Lee; H. H. Tseng; R. Jammy

doi:10.1109/LED.2008.2007661

New hot-carrier injection mechanism at source side in nanoscale floating-body MOSFETs

J. W. Yang, H. R. Harris, G. Bersuker, C. Y. Kang, J. Oh, B. H. Lee, H. H. Tseng, R. Jammy

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A new hot-carrier injection mechanism that depends on gate bias and body thickness in nanoscale floating-body MOSFETs has been identified using 2-D device simulation and hot-carrier degradation measurements. When gate voltage is sufficiently high and the body thickness is thin, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension (SE), resulting in impact ionization at the SE. Hot-carrier stress with accelerated gate voltage may lead to a huge overestimation of lifetime in nanoscale floating-body MOSFETs.

Original language	English
Pages (from-to)	54-56
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1109/LED.2008.2007661
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.2007661

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title = "New hot-carrier injection mechanism at source side in nanoscale floating-body MOSFETs",

abstract = "A new hot-carrier injection mechanism that depends on gate bias and body thickness in nanoscale floating-body MOSFETs has been identified using 2-D device simulation and hot-carrier degradation measurements. When gate voltage is sufficiently high and the body thickness is thin, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension (SE), resulting in impact ionization at the SE. Hot-carrier stress with accelerated gate voltage may lead to a huge overestimation of lifetime in nanoscale floating-body MOSFETs.",

author = "Yang, {J. W.} and Harris, {H. R.} and G. Bersuker and Kang, {C. Y.} and J. Oh and Lee, {B. H.} and Tseng, {H. H.} and R. Jammy",

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AU - Yang, J. W.

AU - Harris, H. R.

AU - Bersuker, G.

AU - Kang, C. Y.

AU - Oh, J.

AU - Lee, B. H.

AU - Tseng, H. H.

AU - Jammy, R.

PY - 2009

Y1 - 2009

N2 - A new hot-carrier injection mechanism that depends on gate bias and body thickness in nanoscale floating-body MOSFETs has been identified using 2-D device simulation and hot-carrier degradation measurements. When gate voltage is sufficiently high and the body thickness is thin, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension (SE), resulting in impact ionization at the SE. Hot-carrier stress with accelerated gate voltage may lead to a huge overestimation of lifetime in nanoscale floating-body MOSFETs.

AB - A new hot-carrier injection mechanism that depends on gate bias and body thickness in nanoscale floating-body MOSFETs has been identified using 2-D device simulation and hot-carrier degradation measurements. When gate voltage is sufficiently high and the body thickness is thin, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension (SE), resulting in impact ionization at the SE. Hot-carrier stress with accelerated gate voltage may lead to a huge overestimation of lifetime in nanoscale floating-body MOSFETs.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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New hot-carrier injection mechanism at source side in nanoscale floating-body MOSFETs

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