New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology

Ja Hum Ku; Chul Sung Kim; Chul Joon Choi; Kazuyuki Fujihara; Ho Kyu Kang; Moon Yong Lee; Ju Hyuck Chung; Eung Joon Lee; Jang Eun Lee; Dae Hong Ko

doi:10.1109/IITC.1999.787137

New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology

Ja Hum Ku, Chul Sung Kim, Chul Joon Choi, Kazuyuki Fujihara, Ho Kyu Kang, Moon Yong Lee, Ju Hyuck Chung, Eung Joon Lee, Jang Eun Lee, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

New effect of titanium(Ti) capping layer on cobalt (Co) suicide formation, which is promising for salicidation applications in deep sub-quarter micron devices, was investigated. TEM, SIMS, and XRD data suggest that Ti on top of the cobalt layer diffuses into the Co/Si interface and dissociates the thin silicon oxide at the interface during RTA. As a result, with a Co/Ti process, the sensitivity of Co salicide process to surface condition could be minimized, which gives a larger process window to fabricate deep sub-quarter micron devices.

Original language	English
Title of host publication	Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	256-258
Number of pages	3
ISBN (Electronic)	0780351746, 9780780351745
DOIs	https://doi.org/10.1109/IITC.1999.787137
Publication status	Published - 1999
Event	1999 IEEE International Interconnect Technology Conference, IITC 1999 - San Francisco, United States Duration: 1999 May 24 → 1999 May 26

Publication series

Name	Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Other

Other	1999 IEEE International Interconnect Technology Conference, IITC 1999
Country/Territory	United States
City	San Francisco
Period	99/5/24 → 99/5/26

Bibliographical note

Publisher Copyright:
© 1999 IEEE.

All Science Journal Classification (ASJC) codes

Surfaces, Coatings and Films
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Metals and Alloys
Process Chemistry and Technology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/IITC.1999.787137

Cite this

Ku, J. H., Kim, C. S., Choi, C. J., Fujihara, K., Kang, H. K., Lee, M. Y., Chung, J. H., Lee, E. J., Lee, J. E., & Ko, D. H. (1999). New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology. In Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999 (pp. 256-258). Article 787137 (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.1999.787137

Ku, Ja Hum ; Kim, Chul Sung ; Choi, Chul Joon et al. / New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology. Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999. Institute of Electrical and Electronics Engineers Inc., 1999. pp. 256-258 (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999).

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title = "New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology",

abstract = "New effect of titanium(Ti) capping layer on cobalt (Co) suicide formation, which is promising for salicidation applications in deep sub-quarter micron devices, was investigated. TEM, SIMS, and XRD data suggest that Ti on top of the cobalt layer diffuses into the Co/Si interface and dissociates the thin silicon oxide at the interface during RTA. As a result, with a Co/Ti process, the sensitivity of Co salicide process to surface condition could be minimized, which gives a larger process window to fabricate deep sub-quarter micron devices.",

author = "Ku, {Ja Hum} and Kim, {Chul Sung} and Choi, {Chul Joon} and Kazuyuki Fujihara and Kang, {Ho Kyu} and Lee, {Moon Yong} and Chung, {Ju Hyuck} and Lee, {Eung Joon} and Lee, {Jang Eun} and Ko, {Dae Hong}",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1999 IEEE International Interconnect Technology Conference, IITC 1999 ; Conference date: 24-05-1999 Through 26-05-1999",

year = "1999",

doi = "10.1109/IITC.1999.787137",

language = "English",

series = "Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "256--258",

booktitle = "Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999",

address = "United States",

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Ku, JH, Kim, CS, Choi, CJ, Fujihara, K, Kang, HK, Lee, MY, Chung, JH, Lee, EJ, Lee, JE & Ko, DH 1999, New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology. in Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999., 787137, Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999, Institute of Electrical and Electronics Engineers Inc., pp. 256-258, 1999 IEEE International Interconnect Technology Conference, IITC 1999, San Francisco, United States, 99/5/24. https://doi.org/10.1109/IITC.1999.787137

New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology. / Ku, Ja Hum; Kim, Chul Sung; Choi, Chul Joon et al.
Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999. Institute of Electrical and Electronics Engineers Inc., 1999. p. 256-258 787137 (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology

AU - Ku, Ja Hum

AU - Kim, Chul Sung

AU - Choi, Chul Joon

AU - Fujihara, Kazuyuki

AU - Kang, Ho Kyu

AU - Lee, Moon Yong

AU - Chung, Ju Hyuck

AU - Lee, Eung Joon

AU - Lee, Jang Eun

AU - Ko, Dae Hong

PY - 1999

Y1 - 1999

N2 - New effect of titanium(Ti) capping layer on cobalt (Co) suicide formation, which is promising for salicidation applications in deep sub-quarter micron devices, was investigated. TEM, SIMS, and XRD data suggest that Ti on top of the cobalt layer diffuses into the Co/Si interface and dissociates the thin silicon oxide at the interface during RTA. As a result, with a Co/Ti process, the sensitivity of Co salicide process to surface condition could be minimized, which gives a larger process window to fabricate deep sub-quarter micron devices.

AB - New effect of titanium(Ti) capping layer on cobalt (Co) suicide formation, which is promising for salicidation applications in deep sub-quarter micron devices, was investigated. TEM, SIMS, and XRD data suggest that Ti on top of the cobalt layer diffuses into the Co/Si interface and dissociates the thin silicon oxide at the interface during RTA. As a result, with a Co/Ti process, the sensitivity of Co salicide process to surface condition could be minimized, which gives a larger process window to fabricate deep sub-quarter micron devices.

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M3 - Conference contribution

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T3 - Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

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BT - Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Ku JH, Kim CS, Choi CJ, Fujihara K, Kang HK, Lee MY et al. New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology. In Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999. Institute of Electrical and Electronics Engineers Inc. 1999. p. 256-258. 787137. (Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999). doi: 10.1109/IITC.1999.787137

New effect of Ti-capping layer in co salicide process promising for deep sub-quarter micron technology

Abstract

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Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

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