New approach to the growth of SiOx nanowire bunch using Au catalyst and SiNx film on Si substrate

Nae Man Park, Hyun Kyu Park, Chel Jong Choi, Sang Woo Kim, Sunglyul Maeng

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

SiOx nanowire bunches were fabricated on a SiNx film with Au catalytic metal in the presence of an Ar flow of 50 sccm at 1150 °C. The resulting samples were characterized by field-emission scanning electron microscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. A SiNx film serves as a barrier to the diffusion of Si atoms from the Si substrate to the catalytic Au metal, where a substrate is a Si source material for SiOx nanowire (NW) growth. Using this process, we could temporally control the initial growth step of SiOx NWs and easily grow the NW bunch.

Original languageEnglish
Pages (from-to)3170-3172
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number10
DOIs
Publication statusPublished - 2008 Sept

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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