Negative Differential Resistance Characteristics in Forming-Free NbOx with Crystalline NbO2 Phase

Jimin Lee; Jaeyeon Kim; Taeho Kim; Hyunchul Sohn

doi:10.1002/pssr.202000610

Negative Differential Resistance Characteristics in Forming-Free NbO_x with Crystalline NbO₂ Phase

Jimin Lee, Jaeyeon Kim, Taeho Kim, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Negative differential resistance (NDR) in NbO_x films attracts attention for potential application in neuromorphic computing. A continuous S-type and abrupt snapback NDR characteristics are reported for NbO_x devices. The NDR characteristics are expected to depend on the nature of the switching path in NbO_x. Previous NDR studies have been performed mainly on amorphous NbO_x films with an electroforming process to create a switching path. Herein, the NDR characteristics of a forming-free NbO_x device with crystalline NbO₂ phases are investigated and these are compared with those of an amorphous NbO_x device with forming. The forming-free NbO_x device exhibits a secondary abrupt snapback NDR in addition to the initial S-type NDR, possibly due to a metal–insulator transition in the NbO₂ phases. Meanwhile, the amorphous NbO_x devices only show a continuous S-type behavior.

Original language	English
Article number	2000610
Journal	Physica Status Solidi - Rapid Research Letters
Volume	15
Issue number	4
DOIs	https://doi.org/10.1002/pssr.202000610
Publication status	Published - 2021 Apr

Bibliographical note

Funding Information:
This research was supported by the industry–university cooperation project of Samsung Electronics and MOTIE (Ministry of Trade, Industry & Energy) (project number 100680075) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.

Publisher Copyright:
© 2021 Wiley-VCH GmbH

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1002/pssr.202000610

Cite this

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title = "Negative Differential Resistance Characteristics in Forming-Free NbOx with Crystalline NbO2 Phase",

abstract = "Negative differential resistance (NDR) in NbOx films attracts attention for potential application in neuromorphic computing. A continuous S-type and abrupt snapback NDR characteristics are reported for NbOx devices. The NDR characteristics are expected to depend on the nature of the switching path in NbOx. Previous NDR studies have been performed mainly on amorphous NbOx films with an electroforming process to create a switching path. Herein, the NDR characteristics of a forming-free NbOx device with crystalline NbO2 phases are investigated and these are compared with those of an amorphous NbOx device with forming. The forming-free NbOx device exhibits a secondary abrupt snapback NDR in addition to the initial S-type NDR, possibly due to a metal–insulator transition in the NbO2 phases. Meanwhile, the amorphous NbOx devices only show a continuous S-type behavior.",

author = "Jimin Lee and Jaeyeon Kim and Taeho Kim and Hyunchul Sohn",

note = "Funding Information: This research was supported by the industry–university cooperation project of Samsung Electronics and MOTIE (Ministry of Trade, Industry & Energy) (project number 100680075) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

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N1 - Funding Information: This research was supported by the industry–university cooperation project of Samsung Electronics and MOTIE (Ministry of Trade, Industry & Energy) (project number 100680075) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. Publisher Copyright: © 2021 Wiley-VCH GmbH

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