Near Ultraviolet Light Emission in Hexagonal Boron Nitride Based van der Waals Heterostructures

Sang Hoon Chae; Dongjea Seo; Junyoung Kwon; Gwan Hyoung Lee; Qingrui Cao; Xiang Hua; Irving P. Herman; En Min Shih; Cory R. Dean; Takashi Taniguchi; Kenji Watanabe; David Schiminovich; Heon Jin Choi; Ioannis Kymissis; Young Duck Kim; James Hone

doi:10.23919/CLEO.2019.8750408

Near Ultraviolet Light Emission in Hexagonal Boron Nitride Based van der Waals Heterostructures

Sang Hoon Chae, Dongjea Seo, Junyoung Kwon, Gwan Hyoung Lee, Qingrui Cao, Xiang Hua, Irving P. Herman, En Min Shih, Cory R. Dean, Takashi Taniguchi, Kenji Watanabe, David Schiminovich, Heon Jin Choi, Ioannis Kymissis, Young Duck Kim, James Hone

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate light emitting devices consisting of graphene layers separated and by thin hexagonal boron nitride (hBN) with additional hBN encapsulation. At high bias through two graphene layer, thin hBN produce near ultraviolet (NUV) light emission at 394 nm.

Original language	English
Title of host publication	2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580576
DOIs	https://doi.org/10.23919/CLEO.2019.8750408
Publication status	Published - 2019 May
Event	2019 Conference on Lasers and Electro-Optics, CLEO 2019 - San Jose, United States Duration: 2019 May 5 → 2019 May 10

Publication series

Name	2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Conference

Conference	2019 Conference on Lasers and Electro-Optics, CLEO 2019
Country/Territory	United States
City	San Jose
Period	19/5/5 → 19/5/10

Bibliographical note

Publisher Copyright:
© 2019 The Author(s) 2019 OSA.

All Science Journal Classification (ASJC) codes

Spectroscopy
Industrial and Manufacturing Engineering
Safety, Risk, Reliability and Quality
Management, Monitoring, Policy and Law
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging
Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.23919/CLEO.2019.8750408

Cite this

Chae, S. H., Seo, D., Kwon, J., Lee, G. H., Cao, Q., Hua, X., Herman, I. P., Shih, E. M., Dean, C. R., Taniguchi, T., Watanabe, K., Schiminovich, D., Choi, H. J., Kymissis, I., Kim, Y. D., & Hone, J. (2019). Near Ultraviolet Light Emission in Hexagonal Boron Nitride Based van der Waals Heterostructures. In 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings [8750408] (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/CLEO.2019.8750408

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title = "Near Ultraviolet Light Emission in Hexagonal Boron Nitride Based van der Waals Heterostructures",

abstract = "We demonstrate light emitting devices consisting of graphene layers separated and by thin hexagonal boron nitride (hBN) with additional hBN encapsulation. At high bias through two graphene layer, thin hBN produce near ultraviolet (NUV) light emission at 394 nm.",

author = "Chae, {Sang Hoon} and Dongjea Seo and Junyoung Kwon and Lee, {Gwan Hyoung} and Qingrui Cao and Xiang Hua and Herman, {Irving P.} and Shih, {En Min} and Dean, {Cory R.} and Takashi Taniguchi and Kenji Watanabe and David Schiminovich and Choi, {Heon Jin} and Ioannis Kymissis and Kim, {Young Duck} and James Hone",

note = "Publisher Copyright: {\textcopyright} 2019 The Author(s) 2019 OSA.; 2019 Conference on Lasers and Electro-Optics, CLEO 2019 ; Conference date: 05-05-2019 Through 10-05-2019",

year = "2019",

month = may,

doi = "10.23919/CLEO.2019.8750408",

language = "English",

series = "2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings",

address = "United States",

}

Chae, SH, Seo, D, Kwon, J, Lee, GH, Cao, Q, Hua, X, Herman, IP, Shih, EM, Dean, CR, Taniguchi, T, Watanabe, K, Schiminovich, D, Choi, HJ, Kymissis, I, Kim, YD & Hone, J 2019, Near Ultraviolet Light Emission in Hexagonal Boron Nitride Based van der Waals Heterostructures. in 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings., 8750408, 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Conference on Lasers and Electro-Optics, CLEO 2019, San Jose, United States, 19/5/5. https://doi.org/10.23919/CLEO.2019.8750408

Near Ultraviolet Light Emission in Hexagonal Boron Nitride Based van der Waals Heterostructures. / Chae, Sang Hoon; Seo, Dongjea; Kwon, Junyoung et al.
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8750408 (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Near Ultraviolet Light Emission in Hexagonal Boron Nitride Based van der Waals Heterostructures

AU - Chae, Sang Hoon

AU - Seo, Dongjea

AU - Kwon, Junyoung

AU - Lee, Gwan Hyoung

AU - Cao, Qingrui

AU - Hua, Xiang

AU - Herman, Irving P.

AU - Shih, En Min

AU - Dean, Cory R.

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Schiminovich, David

AU - Choi, Heon Jin

AU - Kymissis, Ioannis

AU - Kim, Young Duck

AU - Hone, James

PY - 2019/5

Y1 - 2019/5

N2 - We demonstrate light emitting devices consisting of graphene layers separated and by thin hexagonal boron nitride (hBN) with additional hBN encapsulation. At high bias through two graphene layer, thin hBN produce near ultraviolet (NUV) light emission at 394 nm.

AB - We demonstrate light emitting devices consisting of graphene layers separated and by thin hexagonal boron nitride (hBN) with additional hBN encapsulation. At high bias through two graphene layer, thin hBN produce near ultraviolet (NUV) light emission at 394 nm.

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U2 - 10.23919/CLEO.2019.8750408

DO - 10.23919/CLEO.2019.8750408

M3 - Conference contribution

AN - SCOPUS:85069169503

T3 - 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

BT - 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Conference on Lasers and Electro-Optics, CLEO 2019

Y2 - 5 May 2019 through 10 May 2019

ER -

Chae SH, Seo D, Kwon J, Lee GH, Cao Q, Hua X et al. Near Ultraviolet Light Emission in Hexagonal Boron Nitride Based van der Waals Heterostructures. In 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8750408. (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings). doi: 10.23919/CLEO.2019.8750408

Near Ultraviolet Light Emission in Hexagonal Boron Nitride Based van der Waals Heterostructures

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

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