Near-infrared photodetectors are developed using graphene/MoS2 and WSe2/MoS2 vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W-1 for the graphene/MoS2 and WSe2/MoS2 heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS2 phototransistor.
|Journal||Journal of Applied Physics|
|Publication status||Published - 2015 Jul 28|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)