Near-infrared photodetectors utilizing MoS2-based heterojunctions

Min Ji Park; Jung Ki Min; Sum Gyun Yi; Joo Hyoung Kim; Jeseung Oh; Kyung Hwa Yoo

doi:10.1063/1.4927749

Near-infrared photodetectors utilizing MoS₂-based heterojunctions

Min Ji Park, Jung Ki Min, Sum Gyun Yi, Joo Hyoung Kim, Jeseung Oh, Kyung Hwa Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Near-infrared photodetectors are developed using graphene/MoS₂ and WSe₂/MoS₂ vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W^-1 for the graphene/MoS₂ and WSe₂/MoS₂ heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS₂ phototransistor.

Original language	English
Article number	044504
Journal	Journal of Applied Physics
Volume	118
Issue number	4
DOIs	https://doi.org/10.1063/1.4927749
Publication status	Published - 2015 Jul 28

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Near-infrared photodetectors utilizing MoS2-based heterojunctions",

abstract = "Near-infrared photodetectors are developed using graphene/MoS2 and WSe2/MoS2 vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W-1 for the graphene/MoS2 and WSe2/MoS2 heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS2 phototransistor.",

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doi = "10.1063/1.4927749",

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AU - Park, Min Ji

AU - Min, Jung Ki

AU - Yi, Sum Gyun

AU - Kim, Joo Hyoung

AU - Oh, Jeseung

AU - Yoo, Kyung Hwa

PY - 2015/7/28

Y1 - 2015/7/28

N2 - Near-infrared photodetectors are developed using graphene/MoS2 and WSe2/MoS2 vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W-1 for the graphene/MoS2 and WSe2/MoS2 heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS2 phototransistor.

AB - Near-infrared photodetectors are developed using graphene/MoS2 and WSe2/MoS2 vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W-1 for the graphene/MoS2 and WSe2/MoS2 heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS2 phototransistor.

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DO - 10.1063/1.4927749

M3 - Article

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JF - Journal of Applied Physics

IS - 4

M1 - 044504

ER -

Near-infrared photodetectors utilizing MoS₂-based heterojunctions

Abstract

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