Near-field scanning optical microscopy of quantum dot broad area laser diodes

S. I. Jung, H. Y. Yeo, I. Yun, J. Y. Leem, I. K. Han, J. S. Kim, J. I. Lee

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Near-field scanning optical microscopy (NSOM) studies of self-assembled InAs quantum dot broad area laser diodes (QD-BALDs) with different active layer were performed. The high resolution (<100 nm) of NSOM provides a detailed mapping of the laser output from the active region. Representative near-field electroluminescence (EL) spectra taken the cross section of the QD-BALD structures below and above the lasing threshold are plotted. Moreover, spatially resolved near-field scanning images of the waveguide are obtained by collecting the EL as the tip is scanned across the surface. Such near-field measurements show a relationship between laser emission and different active layer structure.

Original languageEnglish
Pages (from-to)195-199
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Issue numberSUPPL. 1
Publication statusPublished - 2007 Oct

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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