Near-field scanning optical microscopy of quantum dot broad area laser diodes

S. I. Jung; H. Y. Yeo; I. Yun; J. Y. Leem; I. K. Han; J. S. Kim; J. I. Lee

doi:10.1007/s10854-007-9202-z

Near-field scanning optical microscopy of quantum dot broad area laser diodes

S. I. Jung, H. Y. Yeo, I. Yun, J. Y. Leem, I. K. Han, J. S. Kim, J. I. Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Near-field scanning optical microscopy (NSOM) studies of self-assembled InAs quantum dot broad area laser diodes (QD-BALDs) with different active layer were performed. The high resolution (<100 nm) of NSOM provides a detailed mapping of the laser output from the active region. Representative near-field electroluminescence (EL) spectra taken the cross section of the QD-BALD structures below and above the lasing threshold are plotted. Moreover, spatially resolved near-field scanning images of the waveguide are obtained by collecting the EL as the tip is scanned across the surface. Such near-field measurements show a relationship between laser emission and different active layer structure.

Original language	English
Pages (from-to)	195-199
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	18
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1007/s10854-007-9202-z
Publication status	Published - 2007 Oct

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-007-9202-z

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title = "Near-field scanning optical microscopy of quantum dot broad area laser diodes",

abstract = "Near-field scanning optical microscopy (NSOM) studies of self-assembled InAs quantum dot broad area laser diodes (QD-BALDs) with different active layer were performed. The high resolution (<100 nm) of NSOM provides a detailed mapping of the laser output from the active region. Representative near-field electroluminescence (EL) spectra taken the cross section of the QD-BALD structures below and above the lasing threshold are plotted. Moreover, spatially resolved near-field scanning images of the waveguide are obtained by collecting the EL as the tip is scanned across the surface. Such near-field measurements show a relationship between laser emission and different active layer structure.",

author = "Jung, {S. I.} and Yeo, {H. Y.} and I. Yun and Leem, {J. Y.} and Han, {I. K.} and Kim, {J. S.} and Lee, {J. I.}",

year = "2007",

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T1 - Near-field scanning optical microscopy of quantum dot broad area laser diodes

AU - Jung, S. I.

AU - Yeo, H. Y.

AU - Yun, I.

AU - Leem, J. Y.

AU - Han, I. K.

AU - Kim, J. S.

AU - Lee, J. I.

PY - 2007/10

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AB - Near-field scanning optical microscopy (NSOM) studies of self-assembled InAs quantum dot broad area laser diodes (QD-BALDs) with different active layer were performed. The high resolution (<100 nm) of NSOM provides a detailed mapping of the laser output from the active region. Representative near-field electroluminescence (EL) spectra taken the cross section of the QD-BALD structures below and above the lasing threshold are plotted. Moreover, spatially resolved near-field scanning images of the waveguide are obtained by collecting the EL as the tip is scanned across the surface. Such near-field measurements show a relationship between laser emission and different active layer structure.

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Near-field scanning optical microscopy of quantum dot broad area laser diodes

Abstract

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