Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy

Jeongyong Kim; Kevan Samiee; Jeffrey O. White; Jae Min Myoung; Kyekyoon Kim

doi:10.1063/1.1446206

Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy

Jeongyong Kim, Kevan Samiee, Jeffrey O. White, Jae Min Myoung, Kyekyoon Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The spatial and spectral distribution of photoluminescence from InGaN films grown by plasma-assisted molecular-beam epitaxy are studied by near-field scanning optical microscopy. The luminescence intensity is low in the vicinity of pits in the surface that are believed to be associated with dislocations. For 20% In, the emission is random on a submicron length scale, but clumps into micron-sized regions at 27% In. The clustering is quantified by calculating the image entropy. Near-field spectra indicate that the regions of high intensity are not due to a local increase in In. Spatial variations in the luminescence wavelength indicate that composition fluctuations are enhanced with increasing In.

Original language	English
Pages (from-to)	989-991
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	6
DOIs	https://doi.org/10.1063/1.1446206
Publication status	Published - 2002 Feb 11

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1446206

Cite this

@article{5216e11a13b9462991430ad3a63c799e,

title = "Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy",

abstract = "The spatial and spectral distribution of photoluminescence from InGaN films grown by plasma-assisted molecular-beam epitaxy are studied by near-field scanning optical microscopy. The luminescence intensity is low in the vicinity of pits in the surface that are believed to be associated with dislocations. For 20% In, the emission is random on a submicron length scale, but clumps into micron-sized regions at 27% In. The clustering is quantified by calculating the image entropy. Near-field spectra indicate that the regions of high intensity are not due to a local increase in In. Spatial variations in the luminescence wavelength indicate that composition fluctuations are enhanced with increasing In.",

author = "Jeongyong Kim and Kevan Samiee and White, {Jeffrey O.} and Myoung, {Jae Min} and Kyekyoon Kim",

year = "2002",

month = feb,

day = "11",

doi = "10.1063/1.1446206",

language = "English",

volume = "80",

pages = "989--991",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy

AU - Kim, Jeongyong

AU - Samiee, Kevan

AU - White, Jeffrey O.

AU - Myoung, Jae Min

AU - Kim, Kyekyoon

PY - 2002/2/11

Y1 - 2002/2/11

N2 - The spatial and spectral distribution of photoluminescence from InGaN films grown by plasma-assisted molecular-beam epitaxy are studied by near-field scanning optical microscopy. The luminescence intensity is low in the vicinity of pits in the surface that are believed to be associated with dislocations. For 20% In, the emission is random on a submicron length scale, but clumps into micron-sized regions at 27% In. The clustering is quantified by calculating the image entropy. Near-field spectra indicate that the regions of high intensity are not due to a local increase in In. Spatial variations in the luminescence wavelength indicate that composition fluctuations are enhanced with increasing In.

AB - The spatial and spectral distribution of photoluminescence from InGaN films grown by plasma-assisted molecular-beam epitaxy are studied by near-field scanning optical microscopy. The luminescence intensity is low in the vicinity of pits in the surface that are believed to be associated with dislocations. For 20% In, the emission is random on a submicron length scale, but clumps into micron-sized regions at 27% In. The clustering is quantified by calculating the image entropy. Near-field spectra indicate that the regions of high intensity are not due to a local increase in In. Spatial variations in the luminescence wavelength indicate that composition fluctuations are enhanced with increasing In.

UR - http://www.scopus.com/inward/record.url?scp=79956052644&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956052644&partnerID=8YFLogxK

U2 - 10.1063/1.1446206

DO - 10.1063/1.1446206

M3 - Article

AN - SCOPUS:79956052644

SN - 0003-6951

VL - 80

SP - 989

EP - 991

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this