Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

S. I. Jung; H. Y. Yeo; I. Yun; I. K. Han; S. M. Cho; J. I. Lee

doi:10.3938/jkps.50.763

Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

S. I. Jung, H. Y. Yeo, I. Yun, I. K. Han, S. M. Cho, J. I. Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.

Original language	English
Pages (from-to)	763-766
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.763
Publication status	Published - 2007 Mar

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.3938/jkps.50.763

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abstract = "Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.",

author = "Jung, {S. I.} and Yeo, {H. Y.} and I. Yun and Han, {I. K.} and Cho, {S. M.} and Lee, {J. I.}",

year = "2007",

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AU - Jung, S. I.

AU - Yeo, H. Y.

AU - Yun, I.

AU - Han, I. K.

AU - Cho, S. M.

AU - Lee, J. I.

PY - 2007/3

Y1 - 2007/3

N2 - Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.

AB - Near-field scanning optical microscopy studies of a self-formed InAs quantum dot laser diode (QDLD) at room-temperature were performed. We measured the near-field electroluminescence spectra and the spectrally resolved near-field scanning images emitted from a QDLD with a spatial resolution of ∼100 nm. We show that these data have direct implications for device performance associated with the injection current.

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JF - Journal of the Korean Physical Society

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ER -

Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

Abstract

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