Nanowire arrays for thermoelectric devices

Woo C. Kim, Alexis R. Abramson, Scott T. Huxtable, Arun Majumdar, Yiying Wu, Lynn Trahey, Peidong Yang, Angelica Stacy, Timothy D. Sands, Ronald Gronsky

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi2Te3) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi2Te3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi2Te 3 device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi2Te2 or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.

Original languageEnglish
Title of host publicationProceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1
PublisherAmerican Society of Mechanical Engineers
Number of pages4
ISBN (Print)0791836932, 9780791836934
Publication statusPublished - 2003
Event2003 ASME Summer Heat Transfer Conference (HT2003) - Las Vegas, NV, United States
Duration: 2003 Jul 212003 Jul 23

Publication series

NameProceedings of the ASME Summer Heat Transfer Conference


Other2003 ASME Summer Heat Transfer Conference (HT2003)
Country/TerritoryUnited States
CityLas Vegas, NV

All Science Journal Classification (ASJC) codes

  • Engineering(all)


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