Nanowire arrays for thermoelectric devices

Woo C. Kim; Alexis R. Abramson; Scott T. Huxtable; Arun Majumdar; Yiying Wu; Lynn Trahey; Peidong Yang; Angelica Stacy; Timothy D. Sands; Ronald Gronsky

doi:10.1115/ht2003-47320

Nanowire arrays for thermoelectric devices

Woo C. Kim, Alexis R. Abramson, Scott T. Huxtable, Arun Majumdar, Yiying Wu, Lynn Trahey, Peidong Yang, Angelica Stacy, Timothy D. Sands, Ronald Gronsky

Department of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi₂Te₃) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi₂Te₃ devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi₂Te ₃ device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi₂Te₂ or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.

Original language	English
Title of host publication	Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1
Publisher	American Society of Mechanical Engineers
Pages	101-104
Number of pages	4
ISBN (Print)	0791836932, 9780791836934
DOIs	https://doi.org/10.1115/ht2003-47320
Publication status	Published - 2003
Event	2003 ASME Summer Heat Transfer Conference (HT2003) - Las Vegas, NV, United States Duration: 2003 Jul 21 → 2003 Jul 23

Publication series

Name	Proceedings of the ASME Summer Heat Transfer Conference
Volume	2003

Other

Other	2003 ASME Summer Heat Transfer Conference (HT2003)
Country/Territory	United States
City	Las Vegas, NV
Period	03/7/21 → 03/7/23

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1115/ht2003-47320

Cite this

Kim, W. C., Abramson, A. R., Huxtable, S. T., Majumdar, A., Wu, Y., Trahey, L., Yang, P., Stacy, A., Sands, T. D., & Gronsky, R. (2003). Nanowire arrays for thermoelectric devices. In Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1 (pp. 101-104). (Proceedings of the ASME Summer Heat Transfer Conference; Vol. 2003). American Society of Mechanical Engineers. https://doi.org/10.1115/ht2003-47320

@inproceedings{9ae11ef96cc14c4ba27540ff96d187d2,

title = "Nanowire arrays for thermoelectric devices",

abstract = "This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi2Te3) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi2Te3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi2Te 3 device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi2Te2 or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.",

author = "Kim, {Woo C.} and Abramson, {Alexis R.} and Huxtable, {Scott T.} and Arun Majumdar and Yiying Wu and Lynn Trahey and Peidong Yang and Angelica Stacy and Sands, {Timothy D.} and Ronald Gronsky",

year = "2003",

doi = "10.1115/ht2003-47320",

language = "English",

isbn = "0791836932",

series = "Proceedings of the ASME Summer Heat Transfer Conference",

publisher = "American Society of Mechanical Engineers",

pages = "101--104",

booktitle = "Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1",

note = "2003 ASME Summer Heat Transfer Conference (HT2003) ; Conference date: 21-07-2003 Through 23-07-2003",

}

Kim, WC, Abramson, AR, Huxtable, ST, Majumdar, A, Wu, Y, Trahey, L, Yang, P, Stacy, A, Sands, TD & Gronsky, R 2003, Nanowire arrays for thermoelectric devices. in Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1. Proceedings of the ASME Summer Heat Transfer Conference, vol. 2003, American Society of Mechanical Engineers, pp. 101-104, 2003 ASME Summer Heat Transfer Conference (HT2003), Las Vegas, NV, United States, 03/7/21. https://doi.org/10.1115/ht2003-47320

Nanowire arrays for thermoelectric devices. / Kim, Woo C.; Abramson, Alexis R.; Huxtable, Scott T. et al.
Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1. American Society of Mechanical Engineers, 2003. p. 101-104 (Proceedings of the ASME Summer Heat Transfer Conference; Vol. 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Nanowire arrays for thermoelectric devices

AU - Kim, Woo C.

AU - Abramson, Alexis R.

AU - Huxtable, Scott T.

AU - Majumdar, Arun

AU - Wu, Yiying

AU - Trahey, Lynn

AU - Yang, Peidong

AU - Stacy, Angelica

AU - Sands, Timothy D.

AU - Gronsky, Ronald

PY - 2003

Y1 - 2003

N2 - This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi2Te3) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi2Te3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi2Te 3 device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi2Te2 or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.

AB - This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi2Te3) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi2Te3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi2Te 3 device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi2Te2 or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.

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T3 - Proceedings of the ASME Summer Heat Transfer Conference

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BT - Proceedings of the 003 ASME Summer Heat Transfer Conference, Volume 1

PB - American Society of Mechanical Engineers

T2 - 2003 ASME Summer Heat Transfer Conference (HT2003)

Y2 - 21 July 2003 through 23 July 2003

ER -

Nanowire arrays for thermoelectric devices

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