Nanocrystalline hydrogenated silicon (nc-Si:H) thin films were deposited at room temperature by plasma enhanced chemical vapor deposition (PECVD): a mixture of SiH 4 and H 2 was introduced into the evacuated reaction chamber. When the H 2 flow rate was low, the density of Si-H 3 bonds was high in the films. In particular, when the H 2 flow rate was 50sccm, ~2nm-sized nanocrystallites were present in the films; a large number of Si clusters consisting of Si-H 3 and Si-H 2 bonds were present in the amorphous matrix of the films. When the H 2 flow rate was high, e.g. 100sccm, a large number of Si-H bonds contributed to the passivation of the surface of the large volume of nanocrystallites; a small number of Si clusters consisting of Si-H 2 bonds were present in the amorphous matrix. The relative fraction of the SiH 3 and Si-H 2 bonds in the amorphous matrix varied sensitively with either the H 2 flow rate or post-deposition annealing temperature. The variation was associated with the change in the intensity as well as the wavelength of the main PL peaks, indicating the change in the total volume as well as the size of the nanocrystallites in the films.
|Number of pages
|Applied Surface Science
|Published - 2004 Jul 15
|The Ninth International Conference on the Formation of Semicon - Madrid, Spain
Duration: 2003 Sept 15 → 2003 Sept 19
Bibliographical noteFunding Information:
This work was supported by Grant No. RO1-1999-00030-0 from the Basic Research Program of the Korea Science and Engineering Foundation.
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- General Physics and Astronomy
- Surfaces and Interfaces
- Surfaces, Coatings and Films