Abstract
Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH4 decreased, SiH3 became a dominant type of hydrogen-bonding on crystallite surfaces. SiH 3 radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH4 flow rate in this experiment.
| Original language | English |
|---|---|
| Pages (from-to) | 1017-1020 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 449-452 |
| Issue number | II |
| Publication status | Published - 2004 |
| Event | Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of Duration: 2003 Nov 5 → 2003 Nov 8 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering