Nanostructural and PL features of nc-Si:H thin films prepared by PECVD techniques

J. H. Shim; N. H. Cho; Seongil Im

Nanostructural and PL features of nc-Si:H thin films prepared by PECVD techniques

J. H. Shim, N. H. Cho, Seongil Im

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH₄ decreased, SiH₃ became a dominant type of hydrogen-bonding on crystallite surfaces. SiH ₃ radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH₄ flow rate in this experiment.

Original language	English
Pages (from-to)	1017-1020
Number of pages	4
Journal	Materials Science Forum
Volume	449-452
Issue number	II
Publication status	Published - 2004
Event	Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of Duration: 2003 Nov 5 → 2003 Nov 8

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{c22a7642542b4a77b6989fee4ed6e3ec,

title = "Nanostructural and PL features of nc-Si:H thin films prepared by PECVD techniques",

abstract = "Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH4 decreased, SiH3 became a dominant type of hydrogen-bonding on crystallite surfaces. SiH 3 radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH4 flow rate in this experiment.",

keywords = "PECVD, Photoluminescence, nc-Si",

author = "Shim, {J. H.} and Cho, {N. H.} and Seongil Im",

year = "2004",

language = "English",

volume = "449-452",

pages = "1017--1020",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "II",

note = "Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials ; Conference date: 05-11-2003 Through 08-11-2003",

}

TY - JOUR

T1 - Nanostructural and PL features of nc-Si:H thin films prepared by PECVD techniques

AU - Shim, J. H.

AU - Cho, N. H.

AU - Im, Seongil

PY - 2004

Y1 - 2004

N2 - Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH4 decreased, SiH3 became a dominant type of hydrogen-bonding on crystallite surfaces. SiH 3 radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH4 flow rate in this experiment.

AB - Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) techniques. We could obtain red, green, or blue PL by controlling a kinetic variable, the flow rate of reaction gas. As the flow rate of SiH4 decreased, SiH3 became a dominant type of hydrogen-bonding on crystallite surfaces. SiH 3 radicals seem to have a critical influence on crystallite size by suppressing Si crystal growth in the films. It was found that the crystallite size varied in the range of 2 ∼ 8 nm with the SiH4 flow rate in this experiment.

KW - PECVD

KW - Photoluminescence

KW - nc-Si

UR - http://www.scopus.com/inward/record.url?scp=18744433602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18744433602&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:18744433602

SN - 0255-5476

VL - 449-452

SP - 1017

EP - 1020

JO - Materials Science Forum

JF - Materials Science Forum

IS - II

T2 - Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials

Y2 - 5 November 2003 through 8 November 2003

ER -

Nanostructural and PL features of nc-Si:H thin films prepared by PECVD techniques

Abstract

All Science Journal Classification (ASJC) codes

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