Nanoparticle-dispersed high-k organic-inorganic hybrid dielectrics for organic thin-film transistors

Seong Hui Lee; Sunho Jeong; Jooho Moon

doi:10.1016/j.orgel.2009.05.009

Nanoparticle-dispersed high-k organic-inorganic hybrid dielectrics for organic thin-film transistors

Seong Hui Lee, Sunho Jeong, Jooho Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We fabricated solution-processable thin gate dielectrics for organic thin-film transistors (OTFTs) using an organosiloxane-based organic-inorganic hybrid material. The electrical characteristics of the hybrid dielectrics were controlled by adjusting the zirconium alkoxide concentration. Microstructural observation and chemical analysis allow us to determine the influence of microstructure and composition on the electrical properties of the hybrid dielectrics. Our hybrid material is composed of three phases: ZrO₂, ZrSiO₄, and organosiloxane. OTFTs based on the hybrid dielectrics exhibited better electrical performance compared to transistors based on poly(4-vinylphenol) (PVP). Using a dielectric with a higher dielectric constant and fewer hydroxyl groups enabled us to fabricate a transistor with a lower off-current, higher on/off current ratio, and lower threshold voltage.

Original language	English
Pages (from-to)	982-989
Number of pages	8
Journal	Organic Electronics
Volume	10
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2009.05.009
Publication status	Published - 2009 Aug

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program funded by the Ministry of Education, Science and Technology (No. R0A-2005-000-10011-0).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2009.05.009

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title = "Nanoparticle-dispersed high-k organic-inorganic hybrid dielectrics for organic thin-film transistors",

abstract = "We fabricated solution-processable thin gate dielectrics for organic thin-film transistors (OTFTs) using an organosiloxane-based organic-inorganic hybrid material. The electrical characteristics of the hybrid dielectrics were controlled by adjusting the zirconium alkoxide concentration. Microstructural observation and chemical analysis allow us to determine the influence of microstructure and composition on the electrical properties of the hybrid dielectrics. Our hybrid material is composed of three phases: ZrO2, ZrSiO4, and organosiloxane. OTFTs based on the hybrid dielectrics exhibited better electrical performance compared to transistors based on poly(4-vinylphenol) (PVP). Using a dielectric with a higher dielectric constant and fewer hydroxyl groups enabled us to fabricate a transistor with a lower off-current, higher on/off current ratio, and lower threshold voltage.",

author = "Lee, {Seong Hui} and Sunho Jeong and Jooho Moon",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program funded by the Ministry of Education, Science and Technology (No. R0A-2005-000-10011-0).",

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doi = "10.1016/j.orgel.2009.05.009",

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AU - Lee, Seong Hui

AU - Jeong, Sunho

AU - Moon, Jooho

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PY - 2009/8

Y1 - 2009/8

N2 - We fabricated solution-processable thin gate dielectrics for organic thin-film transistors (OTFTs) using an organosiloxane-based organic-inorganic hybrid material. The electrical characteristics of the hybrid dielectrics were controlled by adjusting the zirconium alkoxide concentration. Microstructural observation and chemical analysis allow us to determine the influence of microstructure and composition on the electrical properties of the hybrid dielectrics. Our hybrid material is composed of three phases: ZrO2, ZrSiO4, and organosiloxane. OTFTs based on the hybrid dielectrics exhibited better electrical performance compared to transistors based on poly(4-vinylphenol) (PVP). Using a dielectric with a higher dielectric constant and fewer hydroxyl groups enabled us to fabricate a transistor with a lower off-current, higher on/off current ratio, and lower threshold voltage.

AB - We fabricated solution-processable thin gate dielectrics for organic thin-film transistors (OTFTs) using an organosiloxane-based organic-inorganic hybrid material. The electrical characteristics of the hybrid dielectrics were controlled by adjusting the zirconium alkoxide concentration. Microstructural observation and chemical analysis allow us to determine the influence of microstructure and composition on the electrical properties of the hybrid dielectrics. Our hybrid material is composed of three phases: ZrO2, ZrSiO4, and organosiloxane. OTFTs based on the hybrid dielectrics exhibited better electrical performance compared to transistors based on poly(4-vinylphenol) (PVP). Using a dielectric with a higher dielectric constant and fewer hydroxyl groups enabled us to fabricate a transistor with a lower off-current, higher on/off current ratio, and lower threshold voltage.

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Nanoparticle-dispersed high-k organic-inorganic hybrid dielectrics for organic thin-film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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