Nano/micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs

Kyunghwan Kim; Yunwon Song; Jungwoo Oh

doi:10.1364/OL.42.003105

Nano/micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs

Kyunghwan Kim, Yunwon Song, Jungwoo Oh

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Light trapping by surface texturing is widely used to improve the performance of optoelectronic devices. In this Letter, we demonstrate nano/micro dual-scale textured GaAs by integrating triangular GaAs by orientation-dependent wet etching and subwavelength nanoholes by metal-assisted chemical etching (MacEtch). This is the first report on nano/micro dual-scale textured GaAs. The reflectance was adjusted by controlling the aspect ratio of the nanoholes by varying the MacEtch duration. The combination of the microstructure and subwavelength structures significantly reduced the solar-weighted reflectance of a bare GaAs substrate by 72%.

Original language	English
Pages (from-to)	3105-3108
Number of pages	4
Journal	Optics Letters
Volume	42
Issue number	16
DOIs	https://doi.org/10.1364/OL.42.003105
Publication status	Published - 2017 Aug 15

Bibliographical note

Funding Information:
Ministry of Science, ICT and Future Planning (MSIP), Korea (IITP-2017-2017-0-01015); National Research Foundation of Korea (NRF); Ministry of Education, Science and Technology (2016R1D1A1A09918647); Ministry of Trade, Industry and Energy (MOTIE) (10044735); Korea Semiconductor Research Consortium (KSRC).

Publisher Copyright:
© 2017 Optical Society of America.

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OL.42.003105

Cite this

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abstract = "Light trapping by surface texturing is widely used to improve the performance of optoelectronic devices. In this Letter, we demonstrate nano/micro dual-scale textured GaAs by integrating triangular GaAs by orientation-dependent wet etching and subwavelength nanoholes by metal-assisted chemical etching (MacEtch). This is the first report on nano/micro dual-scale textured GaAs. The reflectance was adjusted by controlling the aspect ratio of the nanoholes by varying the MacEtch duration. The combination of the microstructure and subwavelength structures significantly reduced the solar-weighted reflectance of a bare GaAs substrate by 72%.",

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N2 - Light trapping by surface texturing is widely used to improve the performance of optoelectronic devices. In this Letter, we demonstrate nano/micro dual-scale textured GaAs by integrating triangular GaAs by orientation-dependent wet etching and subwavelength nanoholes by metal-assisted chemical etching (MacEtch). This is the first report on nano/micro dual-scale textured GaAs. The reflectance was adjusted by controlling the aspect ratio of the nanoholes by varying the MacEtch duration. The combination of the microstructure and subwavelength structures significantly reduced the solar-weighted reflectance of a bare GaAs substrate by 72%.

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Nano/micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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