Nanometer-accurate grating fabrication with scanning beam interference lithography

Carl G. Chen, Paul T. Konkola, Ralf K. Heilmann, Chulmin Joo, Mark L. Schattenburg

Research output: Contribution to journalConference articlepeer-review

33 Citations (Scopus)


We are developing a Scanning Beam Interference Lithography (SBIL) system. SBIL represents a new paradigm in semiconductor metrology, capable of patterning large-area linear gratings and grids with nanometer overall phase accuracy. Realizing our accuracy goal is a major challenge because the interference fringes have to be locked to a moving substrate with nanometer spatial phase errors while the period of the fringes has to be stabilized to approximately one part per million. In this paper, we present a review of the SBIL design, and report recent progress towards prototyping the first-ever SBIL tool.

Original languageEnglish
Pages (from-to)126-134
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2002
EventNano- and Microtechnology: Materials, Processes, Packaging, and Systems - Melbourne, VIC., Australia
Duration: 2002 Dec 162002 Dec 18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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