Abstract
We are developing a Scanning Beam Interference Lithography (SBIL) system. SBIL represents a new paradigm in semiconductor metrology, capable of patterning large-area linear gratings and grids with nanometer overall phase accuracy. Realizing our accuracy goal is a major challenge because the interference fringes have to be locked to a moving substrate with nanometer spatial phase errors while the period of the fringes has to be stabilized to approximately one part per million. In this paper, we present a review of the SBIL design, and report recent progress towards prototyping the first-ever SBIL tool.
Original language | English |
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Pages (from-to) | 126-134 |
Number of pages | 9 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4936 |
DOIs | |
Publication status | Published - 2002 |
Event | Nano- and Microtechnology: Materials, Processes, Packaging, and Systems - Melbourne, VIC., Australia Duration: 2002 Dec 16 → 2002 Dec 18 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering