We report on the antireflection property of AlOx film deposited on n-ZnO/p-Si photodiode and also report on the photoelectric properties of the diode fabricated for detecting both ultraviolet (UV) and visible photons. Optical reflectance spectra obtained from AlOx/ZnO/Si (100) samples exhibited that the reflectance in UV range over the bandgap of ZnO is lower than that in visible range below the bandgap. As characterized by current-voltage (I-V) measurements in the photon range of 310-670 nm, our photodiodes exposed to UV photons show a linear photocurrent increase with reverse bias while under visible photons the photocurrent rapidly rises but saturates from ∼ 5 V on. Our diodes exhibit 0.48 A/W of strong responsivity at 310 nm and 0.2 A/W at 670 nm under a reverse bias of 30 V but show weak responses near 380 nm which is the wavelength corresponding to the bandgap of ZnO.
|Number of pages||4|
|Journal||Thin Solid Films|
|Publication status||Published - 2004 Jan 30|
|Event||Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States|
Duration: 2002 Apr 28 → 2002 May 2
Bibliographical noteFunding Information:
The authors gratefully acknowledge the financial support from KISTEP (M20204250033-02A0903-00440) and the Basic Research Program of KOSEF (ROI-1999-000-00030-0), and in part the BK 21 program in IPAP.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry