n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection

I. S. Jeong; J. H. Kim; Hyung Ho Park; Seongil Im

doi:10.1016/j.tsf.2003.09.032

n-ZnO/p-Si UV photodetectors employing AlO_x films for antireflection

I. S. Jeong, J. H. Kim, Hyung Ho Park, Seongil Im

Research output: Contribution to journal › Conference article › peer-review

32 Citations (Scopus)

Abstract

We report on the antireflection property of AlO_x film deposited on n-ZnO/p-Si photodiode and also report on the photoelectric properties of the diode fabricated for detecting both ultraviolet (UV) and visible photons. Optical reflectance spectra obtained from AlO_x/ZnO/Si (100) samples exhibited that the reflectance in UV range over the bandgap of ZnO is lower than that in visible range below the bandgap. As characterized by current-voltage (I-V) measurements in the photon range of 310-670 nm, our photodiodes exposed to UV photons show a linear photocurrent increase with reverse bias while under visible photons the photocurrent rapidly rises but saturates from ∼ 5 V on. Our diodes exhibit 0.48 A/W of strong responsivity at 310 nm and 0.2 A/W at 670 nm under a reverse bias of 30 V but show weak responses near 380 nm which is the wavelength corresponding to the bandgap of ZnO.

Original language	English
Pages (from-to)	111-114
Number of pages	4
Journal	Thin Solid Films
Volume	447-448
DOIs	https://doi.org/10.1016/j.tsf.2003.09.032
Publication status	Published - 2004 Jan 30
Event	Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: 2002 Apr 28 → 2002 May 2

Bibliographical note

Funding Information:
The authors gratefully acknowledge the financial support from KISTEP (M20204250033-02A0903-00440) and the Basic Research Program of KOSEF (ROI-1999-000-00030-0), and in part the BK 21 program in IPAP.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2003.09.032

Cite this

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title = "n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection",

abstract = "We report on the antireflection property of AlOx film deposited on n-ZnO/p-Si photodiode and also report on the photoelectric properties of the diode fabricated for detecting both ultraviolet (UV) and visible photons. Optical reflectance spectra obtained from AlOx/ZnO/Si (100) samples exhibited that the reflectance in UV range over the bandgap of ZnO is lower than that in visible range below the bandgap. As characterized by current-voltage (I-V) measurements in the photon range of 310-670 nm, our photodiodes exposed to UV photons show a linear photocurrent increase with reverse bias while under visible photons the photocurrent rapidly rises but saturates from ∼ 5 V on. Our diodes exhibit 0.48 A/W of strong responsivity at 310 nm and 0.2 A/W at 670 nm under a reverse bias of 30 V but show weak responses near 380 nm which is the wavelength corresponding to the bandgap of ZnO.",

author = "Jeong, {I. S.} and Kim, {J. H.} and Park, {Hyung Ho} and Seongil Im",

note = "Funding Information: The authors gratefully acknowledge the financial support from KISTEP (M20204250033-02A0903-00440) and the Basic Research Program of KOSEF (ROI-1999-000-00030-0), and in part the BK 21 program in IPAP.; Proceedings of the 30th International Conference on Metallurgie ; Conference date: 28-04-2002 Through 02-05-2002",

year = "2004",

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doi = "10.1016/j.tsf.2003.09.032",

language = "English",

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T1 - n-ZnO/p-Si UV photodetectors employing AlOx films for antireflection

AU - Jeong, I. S.

AU - Kim, J. H.

AU - Park, Hyung Ho

AU - Im, Seongil

N1 - Funding Information: The authors gratefully acknowledge the financial support from KISTEP (M20204250033-02A0903-00440) and the Basic Research Program of KOSEF (ROI-1999-000-00030-0), and in part the BK 21 program in IPAP.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - We report on the antireflection property of AlOx film deposited on n-ZnO/p-Si photodiode and also report on the photoelectric properties of the diode fabricated for detecting both ultraviolet (UV) and visible photons. Optical reflectance spectra obtained from AlOx/ZnO/Si (100) samples exhibited that the reflectance in UV range over the bandgap of ZnO is lower than that in visible range below the bandgap. As characterized by current-voltage (I-V) measurements in the photon range of 310-670 nm, our photodiodes exposed to UV photons show a linear photocurrent increase with reverse bias while under visible photons the photocurrent rapidly rises but saturates from ∼ 5 V on. Our diodes exhibit 0.48 A/W of strong responsivity at 310 nm and 0.2 A/W at 670 nm under a reverse bias of 30 V but show weak responses near 380 nm which is the wavelength corresponding to the bandgap of ZnO.

AB - We report on the antireflection property of AlOx film deposited on n-ZnO/p-Si photodiode and also report on the photoelectric properties of the diode fabricated for detecting both ultraviolet (UV) and visible photons. Optical reflectance spectra obtained from AlOx/ZnO/Si (100) samples exhibited that the reflectance in UV range over the bandgap of ZnO is lower than that in visible range below the bandgap. As characterized by current-voltage (I-V) measurements in the photon range of 310-670 nm, our photodiodes exposed to UV photons show a linear photocurrent increase with reverse bias while under visible photons the photocurrent rapidly rises but saturates from ∼ 5 V on. Our diodes exhibit 0.48 A/W of strong responsivity at 310 nm and 0.2 A/W at 670 nm under a reverse bias of 30 V but show weak responses near 380 nm which is the wavelength corresponding to the bandgap of ZnO.

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SN - 0040-6090

VL - 447-448

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