n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

C. H. Park; I. S. Jeong; H. S. Bae; T. G. Kim; S. Im

doi:10.1016/j.nimb.2003.11.031

n-ZnO/p-Si photodiodes fully isolated by B⁺ ion-implantation

C. H. Park, I. S. Jeong, H. S. Bae, T. G. Kim, S. Im

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B⁺ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5×10¹³ cm^-2. We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, ∼380 nm) before they would reach n-ZnO/p-Si region.

Original language	English
Pages (from-to)	127-130
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	216
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2003.11.031
Publication status	Published - 2004 Feb
Event	Proceedings of the E-MRS 2003 Symposium E on Ion Beams - Strasbourg, France Duration: 2003 Jun 10 → 2003 Jun 13

Bibliographical note

Funding Information:
Authors highly acknowledge the financial support from Korea Institute of Science and Technology Evaluation and Planning (KISTEP, project no. M20204250033-02A0903-00440), the Basic Research Program of the Korea Science and Engineering Foundation (grant no. R01-1999-000-00030-0) and the partial support from the BK21 program.

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nimb.2003.11.031

Cite this

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title = "n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation",

abstract = "We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5×1013 cm-2. We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, ∼380 nm) before they would reach n-ZnO/p-Si region.",

author = "Park, {C. H.} and Jeong, {I. S.} and Bae, {H. S.} and Kim, {T. G.} and S. Im",

note = "Funding Information: Authors highly acknowledge the financial support from Korea Institute of Science and Technology Evaluation and Planning (KISTEP, project no. M20204250033-02A0903-00440), the Basic Research Program of the Korea Science and Engineering Foundation (grant no. R01-1999-000-00030-0) and the partial support from the BK21 program.; Proceedings of the E-MRS 2003 Symposium E on Ion Beams ; Conference date: 10-06-2003 Through 13-06-2003",

year = "2004",

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doi = "10.1016/j.nimb.2003.11.031",

language = "English",

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T1 - n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation

AU - Park, C. H.

AU - Jeong, I. S.

AU - Bae, H. S.

AU - Kim, T. G.

AU - Im, S.

N1 - Funding Information: Authors highly acknowledge the financial support from Korea Institute of Science and Technology Evaluation and Planning (KISTEP, project no. M20204250033-02A0903-00440), the Basic Research Program of the Korea Science and Engineering Foundation (grant no. R01-1999-000-00030-0) and the partial support from the BK21 program.

PY - 2004/2

Y1 - 2004/2

N2 - We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5×1013 cm-2. We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, ∼380 nm) before they would reach n-ZnO/p-Si region.

AB - We report on the fabrication of a heterojunction photodiode for the visible range that consists of a transparent insulating ZnO (i-ZnO) overlayer and a transparent semiconducting n-ZnO layer on p-Si. For device isolation, we implanted B+ ions into peripheral n-ZnO layer with varying doses and found considerable reduction of dark leakage current in our device at a low-dose of 5×1013 cm-2. We have also obtained wide-range spectral quantum efficiency for our isolated photodiodes. They exhibited quite a high-quantum efficiency of 45% under 700 nm (red) photons but the efficiency drops at 380 nm near ultraviolet (UV) because the top insulating i-ZnO layers absorbed most of the UV photons with higher energy than ZnO band gap (3.3 eV, ∼380 nm) before they would reach n-ZnO/p-Si region.

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VL - 216

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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