n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique

C. H. Park; J. Y. Lee; S. Im; T. G. Kim

doi:10.1016/S0168-583X(03)00786-9

n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique

C. H. Park, J. Y. Lee, S. Im, T. G. Kim

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

18 Citations (Scopus)

Abstract

We report on the fabrication of a new Si-based photodiode that has both insulating ZnO and n-ZnO overlayers. Thin n-ZnO layer was deposited on p-Si at 480 °C by RF magnetron sputtering and an insulating ZnO film was subsequently deposited at room temperature using the same deposition method. Silicon ions at 100 keV with doses of 5×10¹³, 5×10¹⁴ and 5×10¹⁵ cm^-2 were implanted into n-ZnO area, that was in the outside of an active device window, for inter-device isolation. The dark leakage current of the implanted photodiode clearly decreases with the dose. As measured under red laser illumination of 670 nm, photoresponsivity of 0.28 A/W and quantum efficiency of about 50% were obtained from our new n-ZnO/p-Si photodiode.

Original language	English
Pages (from-to)	432-435
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	206
DOIs	https://doi.org/10.1016/S0168-583X(03)00786-9
Publication status	Published - 2003 May
Event	13th International conference on Ion beam modification of Mate - Kobe, Japan Duration: 2002 Sept 1 → 2002 Sept 6

Bibliographical note

Funding Information:
Authors highly acknowledge the financial support from Korea Institute of Science and Technology Evaluation and Planning (KISTEP, project no. M20204250033-02A0903-00440), and the partial support from BK21 program.

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(03)00786-9

Cite this

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title = "n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique",

abstract = "We report on the fabrication of a new Si-based photodiode that has both insulating ZnO and n-ZnO overlayers. Thin n-ZnO layer was deposited on p-Si at 480 °C by RF magnetron sputtering and an insulating ZnO film was subsequently deposited at room temperature using the same deposition method. Silicon ions at 100 keV with doses of 5×1013, 5×1014 and 5×1015 cm-2 were implanted into n-ZnO area, that was in the outside of an active device window, for inter-device isolation. The dark leakage current of the implanted photodiode clearly decreases with the dose. As measured under red laser illumination of 670 nm, photoresponsivity of 0.28 A/W and quantum efficiency of about 50% were obtained from our new n-ZnO/p-Si photodiode.",

keywords = "Implantation, Isolation, Leakage current, Photodiode",

author = "Park, {C. H.} and Lee, {J. Y.} and S. Im and Kim, {T. G.}",

note = "Funding Information: Authors highly acknowledge the financial support from Korea Institute of Science and Technology Evaluation and Planning (KISTEP, project no. M20204250033-02A0903-00440), and the partial support from BK21 program.; 13th International conference on Ion beam modification of Mate ; Conference date: 01-09-2002 Through 06-09-2002",

year = "2003",

month = may,

doi = "10.1016/S0168-583X(03)00786-9",

language = "English",

volume = "206",

pages = "432--435",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique

AU - Park, C. H.

AU - Lee, J. Y.

AU - Im, S.

AU - Kim, T. G.

N1 - Funding Information: Authors highly acknowledge the financial support from Korea Institute of Science and Technology Evaluation and Planning (KISTEP, project no. M20204250033-02A0903-00440), and the partial support from BK21 program.

PY - 2003/5

Y1 - 2003/5

N2 - We report on the fabrication of a new Si-based photodiode that has both insulating ZnO and n-ZnO overlayers. Thin n-ZnO layer was deposited on p-Si at 480 °C by RF magnetron sputtering and an insulating ZnO film was subsequently deposited at room temperature using the same deposition method. Silicon ions at 100 keV with doses of 5×1013, 5×1014 and 5×1015 cm-2 were implanted into n-ZnO area, that was in the outside of an active device window, for inter-device isolation. The dark leakage current of the implanted photodiode clearly decreases with the dose. As measured under red laser illumination of 670 nm, photoresponsivity of 0.28 A/W and quantum efficiency of about 50% were obtained from our new n-ZnO/p-Si photodiode.

AB - We report on the fabrication of a new Si-based photodiode that has both insulating ZnO and n-ZnO overlayers. Thin n-ZnO layer was deposited on p-Si at 480 °C by RF magnetron sputtering and an insulating ZnO film was subsequently deposited at room temperature using the same deposition method. Silicon ions at 100 keV with doses of 5×1013, 5×1014 and 5×1015 cm-2 were implanted into n-ZnO area, that was in the outside of an active device window, for inter-device isolation. The dark leakage current of the implanted photodiode clearly decreases with the dose. As measured under red laser illumination of 670 nm, photoresponsivity of 0.28 A/W and quantum efficiency of about 50% were obtained from our new n-ZnO/p-Si photodiode.

KW - Implantation

KW - Isolation

KW - Leakage current

KW - Photodiode

UR - http://www.scopus.com/inward/record.url?scp=0037737633&partnerID=8YFLogxK

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U2 - 10.1016/S0168-583X(03)00786-9

DO - 10.1016/S0168-583X(03)00786-9

M3 - Conference article

AN - SCOPUS:0037737633

SN - 0168-583X

VL - 206

SP - 432

EP - 435

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - 13th International conference on Ion beam modification of Mate

Y2 - 1 September 2002 through 6 September 2002

ER -

n-ZnO/p-Si photodiodes fabricated using ion-beam induced isolation technique

Abstract

Bibliographical note

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