We report on the fabrication of a new Si-based photodiode that has both insulating ZnO and n-ZnO overlayers. Thin n-ZnO layer was deposited on p-Si at 480 °C by RF magnetron sputtering and an insulating ZnO film was subsequently deposited at room temperature using the same deposition method. Silicon ions at 100 keV with doses of 5×1013, 5×1014 and 5×1015 cm-2 were implanted into n-ZnO area, that was in the outside of an active device window, for inter-device isolation. The dark leakage current of the implanted photodiode clearly decreases with the dose. As measured under red laser illumination of 670 nm, photoresponsivity of 0.28 A/W and quantum efficiency of about 50% were obtained from our new n-ZnO/p-Si photodiode.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 2003 May|
|Event||13th International conference on Ion beam modification of Mate - Kobe, Japan|
Duration: 2002 Sept 1 → 2002 Sept 6
Bibliographical noteFunding Information:
Authors highly acknowledge the financial support from Korea Institute of Science and Technology Evaluation and Planning (KISTEP, project no. M20204250033-02A0903-00440), and the partial support from BK21 program.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics