Mott-transition-based RRAM

Yue Wang, Kyung Mun Kang, Minjae Kim, Hong Sub Lee, Rainer Waser, Dirk Wouters, Regina Dittmann, J. Joshua Yang, Hyung Ho Park

Research output: Contribution to journalReview articlepeer-review

55 Citations (Scopus)


Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.

Original languageEnglish
Pages (from-to)63-80
Number of pages18
JournalMaterials Today
Publication statusPublished - 2019 Sept

Bibliographical note

Publisher Copyright:
© 2019 Elsevier Ltd

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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