Mo1-xWxSe2-Based Schottky Junction Photovoltaic Cells

Sum Gyun Yi, Sung Hyun Kim, Sungjin Park, Donggun Oh, Hwan Young Choi, Nara Lee, Young Jai Choi, Kyung Hwa Yoo

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22 Citations (Scopus)


We developed Schottky junction photovoltaic cells based on multilayer Mo1-xWxSe2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo0.5W0.5Se2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe2 and WSe2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo0.5W0.5Se2 devices. Furthermore, we showed that Mo0.5W0.5Se2-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications.

Original languageEnglish
Pages (from-to)33811-33820
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number49
Publication statusPublished - 2016 Dec 14

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • General Materials Science


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