MoS2 doping by atomic layer deposition of high-k dielectrics using alcohol as process oxidants

Whang Je Woo; Seunggi Seo; Taewook Nam; Youngjun Kim; Donghyun Kim; Jeong Gyu Song; Il Kwon Oh; Jun Hyung Lim; Hyung Jun Kim; Hyungjun Kim

doi:10.1016/j.apsusc.2020.148504

MoS₂ doping by atomic layer deposition of high-k dielectrics using alcohol as process oxidants

Whang Je Woo, Seunggi Seo, Taewook Nam, Youngjun Kim, Donghyun Kim, Jeong Gyu Song, Il Kwon Oh, Jun Hyung Lim, Hyung Jun Kim, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We developed doping technique of transition metal dichalcogenides based on atomic layer deposition (ALD) of oxide thin films. In this study, we deposited ALD Al₂O₃ overlayer using various oxidant including iso-propyl alcohol (IPA) and ethanol and investigated the doping effects depending on the choice of oxidant for ALD process. The doping effects were investigated by the change in the performance of bottom-gated MoS₂ field effect transistors. Experimental results indicate that Al₂O₃ overlayer deposited using IPA as ALD reactant produces more efficient n-type doping effect compared to ethanol. Moreover, doping was effectively controlled by modulating atomic layer deposition process. ALD process using effective oxidant material is expected to be practically used for realizing the fabrication of threshold voltage-controllable transistors or further applications such as diodes.

Original language	English
Article number	148504
Journal	Applied Surface Science
Volume	541
DOIs	https://doi.org/10.1016/j.apsusc.2020.148504
Publication status	Published - 2021 Mar 1

Bibliographical note

Funding Information:
This work was supported by Samsung Display CO. LTD; and the Materials and Components Technology Development Program of MOTIE/KEIT [10080527, Development of commercialization technology of high sensitive gas sensor based on chalcogenide 2D nano material].

Funding Information:
This work was supported by Samsung Display CO., LTD; and the Materials and Components Technology Development Program of MOTIE/KEIT [10080527, Development of commercialization technology of high sensitive gas sensor based on chalcogenide 2D nano material].

Publisher Copyright:
© 2020

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2020.148504

Cite this

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title = "MoS2 doping by atomic layer deposition of high-k dielectrics using alcohol as process oxidants",

abstract = "We developed doping technique of transition metal dichalcogenides based on atomic layer deposition (ALD) of oxide thin films. In this study, we deposited ALD Al2O3 overlayer using various oxidant including iso-propyl alcohol (IPA) and ethanol and investigated the doping effects depending on the choice of oxidant for ALD process. The doping effects were investigated by the change in the performance of bottom-gated MoS2 field effect transistors. Experimental results indicate that Al2O3 overlayer deposited using IPA as ALD reactant produces more efficient n-type doping effect compared to ethanol. Moreover, doping was effectively controlled by modulating atomic layer deposition process. ALD process using effective oxidant material is expected to be practically used for realizing the fabrication of threshold voltage-controllable transistors or further applications such as diodes.",

keywords = "Alcohol, Atomic-layer-deposition, Doping, Field-effect-transistor, MoS",

author = "Woo, {Whang Je} and Seunggi Seo and Taewook Nam and Youngjun Kim and Donghyun Kim and Song, {Jeong Gyu} and Oh, {Il Kwon} and Lim, {Jun Hyung} and Kim, {Hyung Jun} and Hyungjun Kim",

note = "Funding Information: This work was supported by Samsung Display CO. LTD; and the Materials and Components Technology Development Program of MOTIE/KEIT [10080527, Development of commercialization technology of high sensitive gas sensor based on chalcogenide 2D nano material]. Funding Information: This work was supported by Samsung Display CO., LTD; and the Materials and Components Technology Development Program of MOTIE/KEIT [10080527, Development of commercialization technology of high sensitive gas sensor based on chalcogenide 2D nano material]. Publisher Copyright: {\textcopyright} 2020",

year = "2021",

month = mar,

day = "1",

doi = "10.1016/j.apsusc.2020.148504",

language = "English",

volume = "541",

journal = "Applied Surface Science",

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T1 - MoS2 doping by atomic layer deposition of high-k dielectrics using alcohol as process oxidants

AU - Woo, Whang Je

AU - Seo, Seunggi

AU - Nam, Taewook

AU - Kim, Youngjun

AU - Kim, Donghyun

AU - Song, Jeong Gyu

AU - Oh, Il Kwon

AU - Lim, Jun Hyung

AU - Kim, Hyung Jun

AU - Kim, Hyungjun

N1 - Funding Information: This work was supported by Samsung Display CO. LTD; and the Materials and Components Technology Development Program of MOTIE/KEIT [10080527, Development of commercialization technology of high sensitive gas sensor based on chalcogenide 2D nano material]. Funding Information: This work was supported by Samsung Display CO., LTD; and the Materials and Components Technology Development Program of MOTIE/KEIT [10080527, Development of commercialization technology of high sensitive gas sensor based on chalcogenide 2D nano material]. Publisher Copyright: © 2020

PY - 2021/3/1

Y1 - 2021/3/1

N2 - We developed doping technique of transition metal dichalcogenides based on atomic layer deposition (ALD) of oxide thin films. In this study, we deposited ALD Al2O3 overlayer using various oxidant including iso-propyl alcohol (IPA) and ethanol and investigated the doping effects depending on the choice of oxidant for ALD process. The doping effects were investigated by the change in the performance of bottom-gated MoS2 field effect transistors. Experimental results indicate that Al2O3 overlayer deposited using IPA as ALD reactant produces more efficient n-type doping effect compared to ethanol. Moreover, doping was effectively controlled by modulating atomic layer deposition process. ALD process using effective oxidant material is expected to be practically used for realizing the fabrication of threshold voltage-controllable transistors or further applications such as diodes.

AB - We developed doping technique of transition metal dichalcogenides based on atomic layer deposition (ALD) of oxide thin films. In this study, we deposited ALD Al2O3 overlayer using various oxidant including iso-propyl alcohol (IPA) and ethanol and investigated the doping effects depending on the choice of oxidant for ALD process. The doping effects were investigated by the change in the performance of bottom-gated MoS2 field effect transistors. Experimental results indicate that Al2O3 overlayer deposited using IPA as ALD reactant produces more efficient n-type doping effect compared to ethanol. Moreover, doping was effectively controlled by modulating atomic layer deposition process. ALD process using effective oxidant material is expected to be practically used for realizing the fabrication of threshold voltage-controllable transistors or further applications such as diodes.

KW - Alcohol

KW - Atomic-layer-deposition

KW - Doping

KW - Field-effect-transistor

KW - MoS

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