MoS 2 nanosheet phototransistors with thickness-modulated optical energy gap

Hee Sung Lee; Sung Wook Min; Youn Gyung Chang; Min Kyu Park; Taewook Nam; Hyungjun Kim; Jae Hoon Kim; Sunmin Ryu; Seongil Im

doi:10.1021/nl301485q

MoS ₂ nanosheet phototransistors with thickness-modulated optical energy gap

Hee Sung Lee, Sung Wook Min, Youn Gyung Chang, Min Kyu Park, Taewook Nam, Hyungjun Kim, Jae Hoon Kim, Sunmin Ryu, Seongil Im

Research output: Contribution to journal › Article › peer-review

1201 Citations (Scopus)

Abstract

We report on the fabrication of top-gate phototransistors based on a few-layered MoS ₂ nanosheet with a transparent gate electrode. Our devices with triple MoS ₂ layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS ₂ layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS ₂ has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS ₂ reduce to 1.65 and 1.35 eV, respectively.

Original language	English
Pages (from-to)	3695-3700
Number of pages	6
Journal	Nano letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1021/nl301485q
Publication status	Published - 2012 Jul 11

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl301485q

Cite this

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title = "MoS 2 nanosheet phototransistors with thickness-modulated optical energy gap",

abstract = "We report on the fabrication of top-gate phototransistors based on a few-layered MoS 2 nanosheet with a transparent gate electrode. Our devices with triple MoS 2 layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS 2 layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS 2 has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS 2 reduce to 1.65 and 1.35 eV, respectively.",

author = "Lee, {Hee Sung} and Min, {Sung Wook} and Chang, {Youn Gyung} and Park, {Min Kyu} and Taewook Nam and Hyungjun Kim and Kim, {Jae Hoon} and Sunmin Ryu and Seongil Im",

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T1 - MoS 2 nanosheet phototransistors with thickness-modulated optical energy gap

AU - Lee, Hee Sung

AU - Min, Sung Wook

AU - Chang, Youn Gyung

AU - Park, Min Kyu

AU - Nam, Taewook

AU - Kim, Hyungjun

AU - Kim, Jae Hoon

AU - Ryu, Sunmin

AU - Im, Seongil

PY - 2012/7/11

Y1 - 2012/7/11

N2 - We report on the fabrication of top-gate phototransistors based on a few-layered MoS 2 nanosheet with a transparent gate electrode. Our devices with triple MoS 2 layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS 2 layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS 2 has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS 2 reduce to 1.65 and 1.35 eV, respectively.

AB - We report on the fabrication of top-gate phototransistors based on a few-layered MoS 2 nanosheet with a transparent gate electrode. Our devices with triple MoS 2 layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS 2 layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS 2 has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS 2 reduce to 1.65 and 1.35 eV, respectively.

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MoS ₂ nanosheet phototransistors with thickness-modulated optical energy gap

Abstract

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