MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity

Jaehyun Yang, Hyena Kwak, Youngbin Lee, Yu Seon Kang, Mann Ho Cho, Jeong Ho Cho, Yong Hoon Kim, Seong Jun Jeong, Seongjun Park, Hoo Jeong Lee, Hyoungsub Kim

Research output: Contribution to journalArticlepeer-review

96 Citations (Scopus)


We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

Original languageEnglish
Pages (from-to)8576-8582
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number13
Publication statusPublished - 2016 Apr 20

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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