Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

Chang Hun Song; Minwoo Kong; Hyunchul Jang; Sang Tae Lee; Hyeong Ho Park; Donghyun Kim; Keunman Song; Dae Hong Ko; Chan Soo Shin

doi:10.3390/cryst12121846

Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

Chang Hun Song, Minwoo Kong, Hyunchul Jang, Sang Tae Lee, Hyeong Ho Park, Donghyun Kim, Keunman Song, Dae Hong Ko, Chan Soo Shin

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, we reported changes in the growth morphology of n+InAs nanowires (NWs) doped with Te which were selectively grown on nano-hole patterned InP(111)B substrates using an MOCVD method. While the vertical growth of InAs NWs in the <111> direction was extremely suppressed, their lateral growth was enhanced when the diethyl-tellurium (DETe) flow rate was increased as they grew. Moreover, the sidewall planes evolved from ((Formula presented.)) (90° against the (111) plane) to a reverse-tapered morphology, which had a 62° slope against the InP (111)B plane, when the Te flow rate and growth time were increased. This indicates that the surfactant effect of adsorbed Te atoms on InAs changes the relative growth rate between (111) and ((Formula presented.)) due to the increase in surface free energy in the growth plane.

Original language	English
Article number	1846
Journal	Crystals
Volume	12
Issue number	12
DOIs	https://doi.org/10.3390/cryst12121846
Publication status	Published - 2022 Dec

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Publisher Copyright:
© 2022 by the authors.

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Condensed Matter Physics
Inorganic Chemistry

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title = "Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method",

abstract = "In this paper, we reported changes in the growth morphology of n+InAs nanowires (NWs) doped with Te which were selectively grown on nano-hole patterned InP(111)B substrates using an MOCVD method. While the vertical growth of InAs NWs in the <111> direction was extremely suppressed, their lateral growth was enhanced when the diethyl-tellurium (DETe) flow rate was increased as they grew. Moreover, the sidewall planes evolved from ((Formula presented.)) (90° against the (111) plane) to a reverse-tapered morphology, which had a 62° slope against the InP (111)B plane, when the Te flow rate and growth time were increased. This indicates that the surfactant effect of adsorbed Te atoms on InAs changes the relative growth rate between (111) and ((Formula presented.)) due to the increase in surface free energy in the growth plane.",

keywords = "InAs, MOCVD, nanowire, reverse tapering, vapor–solid method",

author = "Song, {Chang Hun} and Minwoo Kong and Hyunchul Jang and Lee, {Sang Tae} and Park, {Hyeong Ho} and Donghyun Kim and Keunman Song and Ko, {Dae Hong} and Shin, {Chan Soo}",

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month = dec,

doi = "10.3390/cryst12121846",

language = "English",

volume = "12",

journal = "Crystals",

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T1 - Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

AU - Song, Chang Hun

AU - Kong, Minwoo

AU - Jang, Hyunchul

AU - Lee, Sang Tae

AU - Park, Hyeong Ho

AU - Kim, Donghyun

AU - Song, Keunman

AU - Ko, Dae Hong

AU - Shin, Chan Soo

PY - 2022/12

Y1 - 2022/12

N2 - In this paper, we reported changes in the growth morphology of n+InAs nanowires (NWs) doped with Te which were selectively grown on nano-hole patterned InP(111)B substrates using an MOCVD method. While the vertical growth of InAs NWs in the <111> direction was extremely suppressed, their lateral growth was enhanced when the diethyl-tellurium (DETe) flow rate was increased as they grew. Moreover, the sidewall planes evolved from ((Formula presented.)) (90° against the (111) plane) to a reverse-tapered morphology, which had a 62° slope against the InP (111)B plane, when the Te flow rate and growth time were increased. This indicates that the surfactant effect of adsorbed Te atoms on InAs changes the relative growth rate between (111) and ((Formula presented.)) due to the increase in surface free energy in the growth plane.

AB - In this paper, we reported changes in the growth morphology of n+InAs nanowires (NWs) doped with Te which were selectively grown on nano-hole patterned InP(111)B substrates using an MOCVD method. While the vertical growth of InAs NWs in the <111> direction was extremely suppressed, their lateral growth was enhanced when the diethyl-tellurium (DETe) flow rate was increased as they grew. Moreover, the sidewall planes evolved from ((Formula presented.)) (90° against the (111) plane) to a reverse-tapered morphology, which had a 62° slope against the InP (111)B plane, when the Te flow rate and growth time were increased. This indicates that the surfactant effect of adsorbed Te atoms on InAs changes the relative growth rate between (111) and ((Formula presented.)) due to the increase in surface free energy in the growth plane.

KW - InAs

KW - MOCVD

KW - nanowire

KW - reverse tapering

KW - vapor–solid method

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DO - 10.3390/cryst12121846

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JO - Crystals

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M1 - 1846

ER -

Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method

Abstract

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