Morphological evolution of zinc oxide thin films with variation in sputtering power and substrate temperature

Surya Prakash Ghosh, Kailash Chandra Das, Nilakantha Tripathy, Gouranga Bose, Do Hoon Kim, Tae Il Lee, Jae Min Myoung, Jyoti Prakash Kar

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2 Citations (Scopus)


Zinc oxide (ZnO) thin films were deposited on silicon substrates by reactive RF magnetron sputtering technique in order to investigate the evolution of the morphological and the optical properties as a function of different RF power and substrate temperature. Analysis of RF power and the substrate temperature have played a significant role in the morphological and the optical properties of the sputtered ZnO thin films. X-ray diffraction pattern of ZnO thin film has shown the appearance of c-axis-oriented (002) peak for all samples with variation in the degrees of crystallinity. The surface roughness as well as the average grain size of the ZnO films found to be decreased with RF power, where as the films grown at higher temperature has shown the evolution of larger grains. ZnO films, deposited at 150 W RF power and substrate of 200°C, have shown better optical properties.

Original languageEnglish
Pages (from-to)325-338
Number of pages14
JournalInternational Journal of Microstructure and Materials Properties
Issue number5
Publication statusPublished - 2016

Bibliographical note

Funding Information:
This work was supported by the department of science and technology (DST), India sponsored Indo-Korea project (INT/Korea/P-16/2013). This research was also supported by the International Research and Development Program of the National research foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (Grant number: 2012K1A3A1A19038371).

Publisher Copyright:
© 2016 Inderscience Enterprises Ltd.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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