TY - JOUR
T1 - Molybdenum disulfide nanoflake-zinc oxide nanowire hybrid photoinverter
AU - Hosseini Shokouh, Seyed Hossein
AU - Pezeshki, Atiye
AU - Raza, Syed Raza Ali
AU - Choi, Kyunghee
AU - Min, Sung Wook
AU - Jeon, Pyo Jin
AU - Lee, Hee Sung
AU - Im, Seongil
PY - 2014/5/27
Y1 - 2014/5/27
N2 - We demonstrate a hybrid inverter-type nanodevice composed of a MoS 2 nanoflake field-effect transistor (FET) and ZnO nanowire Schottky diode on one substrate, aiming at a one-dimensional (1D)-two-dimensional (2D) hybrid integrated electronic circuit with multifunctional capacities of low power consumption, high gain, and photodetection. In the present work, we used a nanotransfer printing method using polydimethylsiloxane for the fabrication of patterned bottom-gate MoS2 nanoflake FETs, so that they could be placed near the ZnO nanowire Schottky diodes that were initially fabricated. The ZnO nanowire Schottky diode and MoS2 FET worked respectively as load and driver for a logic inverter, which exhibits a high voltage gain of ~50 at a supply voltage of 5 V and also shows a low power consumption of less than 50 nW. Moreover, our inverter effectively operates as a photoinverter, detecting visible photons, since MoS2 FETs appear very photosensitive, while the serially connected ZnO nanowire Schottky diode was blind to visible light. Our 1D-2D hybrid nanoinverter would be quite promising for both logic and photosensing applications due to its performance and simple device configuration as well.
AB - We demonstrate a hybrid inverter-type nanodevice composed of a MoS 2 nanoflake field-effect transistor (FET) and ZnO nanowire Schottky diode on one substrate, aiming at a one-dimensional (1D)-two-dimensional (2D) hybrid integrated electronic circuit with multifunctional capacities of low power consumption, high gain, and photodetection. In the present work, we used a nanotransfer printing method using polydimethylsiloxane for the fabrication of patterned bottom-gate MoS2 nanoflake FETs, so that they could be placed near the ZnO nanowire Schottky diodes that were initially fabricated. The ZnO nanowire Schottky diode and MoS2 FET worked respectively as load and driver for a logic inverter, which exhibits a high voltage gain of ~50 at a supply voltage of 5 V and also shows a low power consumption of less than 50 nW. Moreover, our inverter effectively operates as a photoinverter, detecting visible photons, since MoS2 FETs appear very photosensitive, while the serially connected ZnO nanowire Schottky diode was blind to visible light. Our 1D-2D hybrid nanoinverter would be quite promising for both logic and photosensing applications due to its performance and simple device configuration as well.
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U2 - 10.1021/nn501230v
DO - 10.1021/nn501230v
M3 - Article
AN - SCOPUS:84901660147
SN - 1936-0851
VL - 8
SP - 5174
EP - 5181
JO - ACS Nano
JF - ACS Nano
IS - 5
ER -