Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

Xiaochi Liu; Deshun Qu; Hua Min Li; Inyong Moon; Faisal Ahmed; Changsik Kim; Myeongjin Lee; Yongsuk Choi; Jeong Ho Cho; James C. Hone; Won Jong Yoo

doi:10.1021/acsnano.7b03994

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

Xiaochi Liu, Deshun Qu, Hua Min Li, Inyong Moon, Faisal Ahmed, Changsik Kim, Myeongjin Lee, Yongsuk Choi, Jeong Ho Cho, James C. Hone, Won Jong Yoo

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

145 Citations (Scopus)

Abstract

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS₂) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS₂ junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

Original language	English
Pages (from-to)	9143-9150
Number of pages	8
Journal	ACS Nano
Volume	11
Issue number	9
DOIs	https://doi.org/10.1021/acsnano.7b03994
Publication status	Published - 2017 Sept 26

Bibliographical note

Funding Information:
This work was supported by the Global Research Laboratory (GRL) Program (2016K1A1A2912707) and the Global Frontier R&D Program (2013M3A6B1078873) at the Center for Hybrid Interface Materials (HIM), funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF).

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

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10.1021/acsnano.7b03994

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title = "Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction",

abstract = "Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.",

author = "Xiaochi Liu and Deshun Qu and Li, {Hua Min} and Inyong Moon and Faisal Ahmed and Changsik Kim and Myeongjin Lee and Yongsuk Choi and Cho, {Jeong Ho} and Hone, {James C.} and Yoo, {Won Jong}",

note = "Funding Information: This work was supported by the Global Research Laboratory (GRL) Program (2016K1A1A2912707) and the Global Frontier R&D Program (2013M3A6B1078873) at the Center for Hybrid Interface Materials (HIM), funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF). Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

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doi = "10.1021/acsnano.7b03994",

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AU - Liu, Xiaochi

AU - Qu, Deshun

AU - Li, Hua Min

AU - Moon, Inyong

AU - Ahmed, Faisal

AU - Kim, Changsik

AU - Lee, Myeongjin

AU - Choi, Yongsuk

AU - Cho, Jeong Ho

AU - Hone, James C.

AU - Yoo, Won Jong

N1 - Funding Information: This work was supported by the Global Research Laboratory (GRL) Program (2016K1A1A2912707) and the Global Frontier R&D Program (2013M3A6B1078873) at the Center for Hybrid Interface Materials (HIM), funded by the Ministry of Science, ICT & Future Planning via the National Research Foundation of Korea (NRF). Publisher Copyright: © 2017 American Chemical Society.

PY - 2017/9/26

Y1 - 2017/9/26

N2 - Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

AB - Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

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Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

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