Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications

Sang Myung Lee; Ilgu Yun

doi:10.1109/PRIME.2018.8430321

Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications

Sang Myung Lee, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.

Original language	English
Title of host publication	PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	269-272
Number of pages	4
ISBN (Print)	9781538653869
DOIs	https://doi.org/10.1109/PRIME.2018.8430321
Publication status	Published - 2018 Aug 8
Event	14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 - Prague, Czech Republic Duration: 2018 Jul 2 → 2018 Jul 5

Publication series

Name	PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics

Other

Other	14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018
Country/Territory	Czech Republic
City	Prague
Period	18/7/2 → 18/7/5

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University. Also, the authors would like to thank J.H. Kim of LG Display for supporting with concept idea.

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/PRIME.2018.8430321

Cite this

Lee, S. M., & Yun, I. (2018). Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. In PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics (pp. 269-272). Article 8430321 (PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PRIME.2018.8430321

Lee, Sang Myung ; Yun, Ilgu. / Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 269-272 (PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics).

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abstract = "For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.",

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note = "Funding Information: ACKNOWLEDGMENT This work was supported by Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University. Also, the authors would like to thank J.H. Kim of LG Display for supporting with concept idea. Publisher Copyright: {\textcopyright} 2018 IEEE.; 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 ; Conference date: 02-07-2018 Through 05-07-2018",

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Lee, SM & Yun, I 2018, Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. in PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics., 8430321, PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics, Institute of Electrical and Electronics Engineers Inc., pp. 269-272, 14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018, Prague, Czech Republic, 18/7/2. https://doi.org/10.1109/PRIME.2018.8430321

Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. / Lee, Sang Myung; Yun, Ilgu.
PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. Institute of Electrical and Electronics Engineers Inc., 2018. p. 269-272 8430321 (PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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PY - 2018/8/8

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N2 - For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.

AB - For the research of next-generation displays, technology of shrink device size is the most attractive and important technology. It is possible to manufacture high-performance display products by using high integrated devices such as mobile application. However, there is a certain limitation to the downsizing technology. Therefore, new device synthesis techniques are becoming important. In this paper, we propose a device design that combines inorganic material based light-emitting diode (LED) and thin-film transistor (TFT). By integrating the LED and TFT devices into one region, it is possible to highly integrate the devices, which can greatly reduce the size of the entire device. To investigate a possibility of device implementation, technology computer-aided design (TCAD) simulation is used. After that, an optical and electrical characteristic of the device are analyzed. Finally, the light-emitting transistor (LET) is proposed.

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Lee SM, Yun I. Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications. In PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics. Institute of Electrical and Electronics Engineers Inc. 2018. p. 269-272. 8430321. (PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics). doi: 10.1109/PRIME.2018.8430321

Modeling and Simulation of Novel GaN-based Light Emitting Transistor for Display Applications

Abstract

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All Science Journal Classification (ASJC) codes

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