Model-based comparison of RF noise in oscillating diamond and SiC MESFETs

G. L. Bilbro; M. W. Shin; R. J. Trew; A. N. Riddle

Model-based comparison of RF noise in oscillating diamond and SiC MESFETs

G. L. Bilbro, M. W. Shin, R. J. Trew, A. N. Riddle

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a simulation study of RF oscillator noise including 1/f noise and incomplete activation in diamond and silicon carbide MESFETs oscillating in resonant circuits that maximize power at the load.

Original language	English
Title of host publication	Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Editors	Anon
Publisher	Publ by IEEE
Pages	458-467
Number of pages	10
ISBN (Print)	0780308948
Publication status	Published - 1993

Publication series

Name	Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Bilbro, G. L., Shin, M. W., Trew, R. J., & Riddle, A. N. (1993). Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. In Anon (Ed.), Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (pp. 458-467). (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits). Publ by IEEE.

Bilbro, G. L. ; Shin, M. W. ; Trew, R. J. et al. / Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. editor / Anon. Publ by IEEE, 1993. pp. 458-467 (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits).

@inproceedings{9c2788957cc74581854841695fae7b13,

title = "Model-based comparison of RF noise in oscillating diamond and SiC MESFETs",

abstract = "We report a simulation study of RF oscillator noise including 1/f noise and incomplete activation in diamond and silicon carbide MESFETs oscillating in resonant circuits that maximize power at the load.",

author = "Bilbro, {G. L.} and Shin, {M. W.} and Trew, {R. J.} and Riddle, {A. N.}",

year = "1993",

language = "English",

isbn = "0780308948",

series = "Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits",

publisher = "Publ by IEEE",

pages = "458--467",

editor = "Anon",

booktitle = "Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits",

}

Bilbro, GL, Shin, MW, Trew, RJ & Riddle, AN 1993, Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. in Anon (ed.), Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Publ by IEEE, pp. 458-467.

Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. / Bilbro, G. L.; Shin, M. W.; Trew, R. J. et al.
Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. ed. / Anon. Publ by IEEE, 1993. p. 458-467 (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Model-based comparison of RF noise in oscillating diamond and SiC MESFETs

AU - Bilbro, G. L.

AU - Shin, M. W.

AU - Trew, R. J.

AU - Riddle, A. N.

PY - 1993

Y1 - 1993

N2 - We report a simulation study of RF oscillator noise including 1/f noise and incomplete activation in diamond and silicon carbide MESFETs oscillating in resonant circuits that maximize power at the load.

AB - We report a simulation study of RF oscillator noise including 1/f noise and incomplete activation in diamond and silicon carbide MESFETs oscillating in resonant circuits that maximize power at the load.

UR - http://www.scopus.com/inward/record.url?scp=0027810926&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027810926&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027810926

SN - 0780308948

T3 - Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

SP - 458

EP - 467

BT - Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

A2 - Anon, null

PB - Publ by IEEE

ER -

Bilbro GL, Shin MW, Trew RJ, Riddle AN. Model-based comparison of RF noise in oscillating diamond and SiC MESFETs. In Anon, editor, Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Publ by IEEE. 1993. p. 458-467. (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits).

Model-based comparison of RF noise in oscillating diamond and SiC MESFETs

Abstract

Publication series

All Science Journal Classification (ASJC) codes

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