Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Jung Han Kang; Edward Namkyu Cho; Chang Eun Kim; Min Jung Lee; Su Jeong Lee; Jae Min Myoung; Ilgu Yun

doi:10.1063/1.4809727

Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Jung Han Kang, Edward Namkyu Cho, Chang Eun Kim, Min Jung Lee, Su Jeong Lee, Jae Min Myoung, Ilgu Yun

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

The effects of Ar plasma treatment on the back-channel of amorphous InGaZnO (a-IGZO) thin-film transistors are investigated. A decrease in metallic ion-oxygen bonding in the Ar plasma-treated a-IGZO channel layer was observed by X-ray photoelectron spectroscopy (XPS) depth profile analysis. An increase in the channel charge carrier concentration is estimated from the increased oxygen vacancy atomic ratio using XPS curve decomposition analysis. The plasma-treated area of the a-IGZO back-channel is varied with a photoresist screening layer with a varied open window length (L_p). From the L_p- dependent channel resistance analysis, a carrier concentration-dependent field-effect mobility enhancement is observed.

Original language	English
Article number	222103
Journal	Applied Physics Letters
Volume	102
Issue number	22
DOIs	https://doi.org/10.1063/1.4809727
Publication status	Published - 2013 Jun 3

Bibliographical note

Funding Information:
This work was supported by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R32-20031) and by the LG Display academic industrial cooperation program.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4809727

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title = "Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment",

abstract = "The effects of Ar plasma treatment on the back-channel of amorphous InGaZnO (a-IGZO) thin-film transistors are investigated. A decrease in metallic ion-oxygen bonding in the Ar plasma-treated a-IGZO channel layer was observed by X-ray photoelectron spectroscopy (XPS) depth profile analysis. An increase in the channel charge carrier concentration is estimated from the increased oxygen vacancy atomic ratio using XPS curve decomposition analysis. The plasma-treated area of the a-IGZO back-channel is varied with a photoresist screening layer with a varied open window length (Lp). From the Lp- dependent channel resistance analysis, a carrier concentration-dependent field-effect mobility enhancement is observed.",

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note = "Funding Information: This work was supported by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R32-20031) and by the LG Display academic industrial cooperation program.",

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AU - Namkyu Cho, Edward

AU - Eun Kim, Chang

AU - Lee, Min Jung

AU - Jeong Lee, Su

AU - Myoung, Jae Min

AU - Yun, Ilgu

N1 - Funding Information: This work was supported by the WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R32-20031) and by the LG Display academic industrial cooperation program.

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Y1 - 2013/6/3

N2 - The effects of Ar plasma treatment on the back-channel of amorphous InGaZnO (a-IGZO) thin-film transistors are investigated. A decrease in metallic ion-oxygen bonding in the Ar plasma-treated a-IGZO channel layer was observed by X-ray photoelectron spectroscopy (XPS) depth profile analysis. An increase in the channel charge carrier concentration is estimated from the increased oxygen vacancy atomic ratio using XPS curve decomposition analysis. The plasma-treated area of the a-IGZO back-channel is varied with a photoresist screening layer with a varied open window length (Lp). From the Lp- dependent channel resistance analysis, a carrier concentration-dependent field-effect mobility enhancement is observed.

AB - The effects of Ar plasma treatment on the back-channel of amorphous InGaZnO (a-IGZO) thin-film transistors are investigated. A decrease in metallic ion-oxygen bonding in the Ar plasma-treated a-IGZO channel layer was observed by X-ray photoelectron spectroscopy (XPS) depth profile analysis. An increase in the channel charge carrier concentration is estimated from the increased oxygen vacancy atomic ratio using XPS curve decomposition analysis. The plasma-treated area of the a-IGZO back-channel is varied with a photoresist screening layer with a varied open window length (Lp). From the Lp- dependent channel resistance analysis, a carrier concentration-dependent field-effect mobility enhancement is observed.

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Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Abstract

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