Mn:SnO2 ceramics as p-type oxide semiconductor

Chil Hyoung Lee, Bo Ae Nam, Won Kook Choi, Jeon Kook Lee, Doo Jin Choi, Young Jei Oh

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43 Citations (Scopus)


SnO2-based ceramics substituted with manganese as a new p-type oxide semiconductor were prepared by conventional solid state reaction. The Mn was ranged from 5 to 20 mol%, and the microstructure as well as the physical and chemical properties was characterized. Single-phase rutile of Mn:SnO 2 solid solution was obtained in all compositions. Lattice parameter was decreased with the increase of amount of Mn. The compositional change and electrical properties of the Mn:SnO2 ceramics were confirmed by X-ray photoelectron spectroscopy and Hall effect measurement. The 5-10 mol% Mn:SnO2 solid solutions exhibited electrically p-type behavior. The simultaneous presence of Mn2+, Mn3+ and Mn4+ states was approved and Sn4+ in Mn:SnO2 ceramics was partially substituted with Mn3+ which contributes p-type behavior. SnO2 substituted with higher contents of Mn3+ of 50% exhibits p-type semiconductor.

Original languageEnglish
Pages (from-to)722-725
Number of pages4
JournalMaterials Letters
Issue number4
Publication statusPublished - 2011 Feb 28

Bibliographical note

Funding Information:
This study was supported by KIST (Korea Institute of Science and Technology) Future Resource Program ( 2E21631 ).

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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