Mn:SnO2 ceramics as p-type oxide semiconductor

Chil Hyoung Lee; Bo Ae Nam; Won Kook Choi; Jeon Kook Lee; Doo Jin Choi; Young Jei Oh

doi:10.1016/j.matlet.2010.11.021

Mn:SnO₂ ceramics as p-type oxide semiconductor

Chil Hyoung Lee, Bo Ae Nam, Won Kook Choi, Jeon Kook Lee, Doo Jin Choi, Young Jei Oh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

SnO₂-based ceramics substituted with manganese as a new p-type oxide semiconductor were prepared by conventional solid state reaction. The Mn was ranged from 5 to 20 mol%, and the microstructure as well as the physical and chemical properties was characterized. Single-phase rutile of Mn:SnO ₂ solid solution was obtained in all compositions. Lattice parameter was decreased with the increase of amount of Mn. The compositional change and electrical properties of the Mn:SnO₂ ceramics were confirmed by X-ray photoelectron spectroscopy and Hall effect measurement. The 5-10 mol% Mn:SnO₂ solid solutions exhibited electrically p-type behavior. The simultaneous presence of Mn²⁺, Mn³⁺ and Mn⁴⁺ states was approved and Sn⁴⁺ in Mn:SnO₂ ceramics was partially substituted with Mn³⁺ which contributes p-type behavior. SnO₂ substituted with higher contents of Mn³⁺ of 50% exhibits p-type semiconductor.

Original language	English
Pages (from-to)	722-725
Number of pages	4
Journal	Materials Letters
Volume	65
Issue number	4
DOIs	https://doi.org/10.1016/j.matlet.2010.11.021
Publication status	Published - 2011 Feb 28

Bibliographical note

Funding Information:
This study was supported by KIST (Korea Institute of Science and Technology) Future Resource Program ( 2E21631 ).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matlet.2010.11.021

Cite this

@article{2df5f5743f7d4b8b9d7ee225b17c467a,

title = "Mn:SnO2 ceramics as p-type oxide semiconductor",

abstract = "SnO2-based ceramics substituted with manganese as a new p-type oxide semiconductor were prepared by conventional solid state reaction. The Mn was ranged from 5 to 20 mol%, and the microstructure as well as the physical and chemical properties was characterized. Single-phase rutile of Mn:SnO 2 solid solution was obtained in all compositions. Lattice parameter was decreased with the increase of amount of Mn. The compositional change and electrical properties of the Mn:SnO2 ceramics were confirmed by X-ray photoelectron spectroscopy and Hall effect measurement. The 5-10 mol% Mn:SnO2 solid solutions exhibited electrically p-type behavior. The simultaneous presence of Mn2+, Mn3+ and Mn4+ states was approved and Sn4+ in Mn:SnO2 ceramics was partially substituted with Mn3+ which contributes p-type behavior. SnO2 substituted with higher contents of Mn3+ of 50% exhibits p-type semiconductor.",

author = "Lee, {Chil Hyoung} and Nam, {Bo Ae} and Choi, {Won Kook} and Lee, {Jeon Kook} and Choi, {Doo Jin} and Oh, {Young Jei}",

note = "Funding Information: This study was supported by KIST (Korea Institute of Science and Technology) Future Resource Program ( 2E21631 ).",

year = "2011",

month = feb,

day = "28",

doi = "10.1016/j.matlet.2010.11.021",

language = "English",

volume = "65",

pages = "722--725",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Mn:SnO2 ceramics as p-type oxide semiconductor

AU - Lee, Chil Hyoung

AU - Nam, Bo Ae

AU - Choi, Won Kook

AU - Lee, Jeon Kook

AU - Choi, Doo Jin

AU - Oh, Young Jei

N1 - Funding Information: This study was supported by KIST (Korea Institute of Science and Technology) Future Resource Program ( 2E21631 ).

PY - 2011/2/28

Y1 - 2011/2/28

N2 - SnO2-based ceramics substituted with manganese as a new p-type oxide semiconductor were prepared by conventional solid state reaction. The Mn was ranged from 5 to 20 mol%, and the microstructure as well as the physical and chemical properties was characterized. Single-phase rutile of Mn:SnO 2 solid solution was obtained in all compositions. Lattice parameter was decreased with the increase of amount of Mn. The compositional change and electrical properties of the Mn:SnO2 ceramics were confirmed by X-ray photoelectron spectroscopy and Hall effect measurement. The 5-10 mol% Mn:SnO2 solid solutions exhibited electrically p-type behavior. The simultaneous presence of Mn2+, Mn3+ and Mn4+ states was approved and Sn4+ in Mn:SnO2 ceramics was partially substituted with Mn3+ which contributes p-type behavior. SnO2 substituted with higher contents of Mn3+ of 50% exhibits p-type semiconductor.

AB - SnO2-based ceramics substituted with manganese as a new p-type oxide semiconductor were prepared by conventional solid state reaction. The Mn was ranged from 5 to 20 mol%, and the microstructure as well as the physical and chemical properties was characterized. Single-phase rutile of Mn:SnO 2 solid solution was obtained in all compositions. Lattice parameter was decreased with the increase of amount of Mn. The compositional change and electrical properties of the Mn:SnO2 ceramics were confirmed by X-ray photoelectron spectroscopy and Hall effect measurement. The 5-10 mol% Mn:SnO2 solid solutions exhibited electrically p-type behavior. The simultaneous presence of Mn2+, Mn3+ and Mn4+ states was approved and Sn4+ in Mn:SnO2 ceramics was partially substituted with Mn3+ which contributes p-type behavior. SnO2 substituted with higher contents of Mn3+ of 50% exhibits p-type semiconductor.

UR - http://www.scopus.com/inward/record.url?scp=78650449702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650449702&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2010.11.021

DO - 10.1016/j.matlet.2010.11.021

M3 - Article

AN - SCOPUS:78650449702

SN - 0167-577X

VL - 65

SP - 722

EP - 725

JO - Materials Letters

JF - Materials Letters

IS - 4

ER -