Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates

Yong Gon Seo; Kwang Hyeon Baik; Keun Man Song; Seokwoo Lee; Hyungdo Yoon; Jae Hyoun Park; Kyunghwan Oh; Sung Min Hwang

doi:10.1016/j.cap.2010.05.003

Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates

Yong Gon Seo, Kwang Hyeon Baik, Keun Man Song, Seokwoo Lee, Hyungdo Yoon, Jae Hyoun Park, Kyunghwan Oh, Sung Min Hwang

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Non-polar a-plane (1120) light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane (1120) sapphire substrates. The full width at half maximums (FWHMs) of the X-ray rocking curve (XRC) of an a-plane GaN template along the c- and m-axes were measured to be ∼349 and ∼533 arcsec, respectively. The optical output power and external quantum efficiency (EQE) at drive currents of 20 mA and 100 mA under direct current operation in on-wafer measurements were 1.24 mW, 2.4% and 100 mA, 1.7%, respectively. The a-plane LED showed 2.8 nm blue shift with change in drive current from 5 mA to 100 mA. The polarization ratio at room temperature was 0.4 and it indicates that the a-plane LED has polarization anisotropy.

Original language	English
Pages (from-to)	1407-1410
Number of pages	4
Journal	Current Applied Physics
Volume	10
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2010.05.003
Publication status	Published - 2010 Nov

Bibliographical note

Funding Information:
This work was partly supported by the International Joint R&D Program ( 10030797 ) and the KOSEF ( ROA-2008-000 ).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2010.05.003

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@article{80d8c06a16014b5f999382c42e554497,

title = "Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates",

abstract = "Non-polar a-plane (1120) light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane (1120) sapphire substrates. The full width at half maximums (FWHMs) of the X-ray rocking curve (XRC) of an a-plane GaN template along the c- and m-axes were measured to be ∼349 and ∼533 arcsec, respectively. The optical output power and external quantum efficiency (EQE) at drive currents of 20 mA and 100 mA under direct current operation in on-wafer measurements were 1.24 mW, 2.4% and 100 mA, 1.7%, respectively. The a-plane LED showed 2.8 nm blue shift with change in drive current from 5 mA to 100 mA. The polarization ratio at room temperature was 0.4 and it indicates that the a-plane LED has polarization anisotropy.",

author = "Seo, {Yong Gon} and Baik, {Kwang Hyeon} and Song, {Keun Man} and Seokwoo Lee and Hyungdo Yoon and Park, {Jae Hyoun} and Kyunghwan Oh and Hwang, {Sung Min}",

note = "Funding Information: This work was partly supported by the International Joint R&D Program ( 10030797 ) and the KOSEF ( ROA-2008-000 ).",

year = "2010",

month = nov,

doi = "10.1016/j.cap.2010.05.003",

language = "English",

volume = "10",

pages = "1407--1410",

journal = "Current Applied Physics",

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T1 - Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates

AU - Seo, Yong Gon

AU - Baik, Kwang Hyeon

AU - Song, Keun Man

AU - Lee, Seokwoo

AU - Yoon, Hyungdo

AU - Park, Jae Hyoun

AU - Oh, Kyunghwan

AU - Hwang, Sung Min

N1 - Funding Information: This work was partly supported by the International Joint R&D Program ( 10030797 ) and the KOSEF ( ROA-2008-000 ).

PY - 2010/11

Y1 - 2010/11

N2 - Non-polar a-plane (1120) light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane (1120) sapphire substrates. The full width at half maximums (FWHMs) of the X-ray rocking curve (XRC) of an a-plane GaN template along the c- and m-axes were measured to be ∼349 and ∼533 arcsec, respectively. The optical output power and external quantum efficiency (EQE) at drive currents of 20 mA and 100 mA under direct current operation in on-wafer measurements were 1.24 mW, 2.4% and 100 mA, 1.7%, respectively. The a-plane LED showed 2.8 nm blue shift with change in drive current from 5 mA to 100 mA. The polarization ratio at room temperature was 0.4 and it indicates that the a-plane LED has polarization anisotropy.

AB - Non-polar a-plane (1120) light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane (1120) sapphire substrates. The full width at half maximums (FWHMs) of the X-ray rocking curve (XRC) of an a-plane GaN template along the c- and m-axes were measured to be ∼349 and ∼533 arcsec, respectively. The optical output power and external quantum efficiency (EQE) at drive currents of 20 mA and 100 mA under direct current operation in on-wafer measurements were 1.24 mW, 2.4% and 100 mA, 1.7%, respectively. The a-plane LED showed 2.8 nm blue shift with change in drive current from 5 mA to 100 mA. The polarization ratio at room temperature was 0.4 and it indicates that the a-plane LED has polarization anisotropy.

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Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates

Abstract

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