Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors

Hyo Soon Kang; Woo Young Choi

doi:10.1109/MWP.2006.346512

Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors

Hyo Soon Kang, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

We present millimeter-wave optoelectronic mixers based on Si photodetectors fabricated by the standard 130 nm complementary metal-oxide-semiconductor (CMOS) process. The photodetector and optoelectronic mixer characteristics are investigated in order to optimize their performances. Using the avalanche process in photodetectors at high reverse bias voltages, efficient optoelectronic mixing with low conversion loss at 30 GHz band is obtained. In order to demonstrate the feasibility of applying this mixer for Radio-on-fiber (RoF) applications, detection and frequency up-conversion of optical 5 MS/s, 16 quadrature amplitude modulation (QAM) signals into the 30 GHz band is successfully performed. We believe this is the first report of using CMOS-compatible photodetectors for RoF applications.

Original language	English
Title of host publication	2006 International Topical Meeting on Microwave Photonics, MWP
DOIs	https://doi.org/10.1109/MWP.2006.346512
Publication status	Published - 2006
Event	2006 International Topical Meeting on Microwave Photonics, MWP - Grenoble, France Duration: 2006 Oct 3 → 2006 Oct 6

Publication series

Name	2006 International Topical Meeting on Microwave Photonics, MWP

Other

Other	2006 International Topical Meeting on Microwave Photonics, MWP
Country/Territory	France
City	Grenoble
Period	06/10/3 → 06/10/6

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Signal Processing
Communication

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10.1109/MWP.2006.346512

Cite this

@inproceedings{1269d2e18684429296a87cbd6269b15c,

title = "Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors",

abstract = "We present millimeter-wave optoelectronic mixers based on Si photodetectors fabricated by the standard 130 nm complementary metal-oxide-semiconductor (CMOS) process. The photodetector and optoelectronic mixer characteristics are investigated in order to optimize their performances. Using the avalanche process in photodetectors at high reverse bias voltages, efficient optoelectronic mixing with low conversion loss at 30 GHz band is obtained. In order to demonstrate the feasibility of applying this mixer for Radio-on-fiber (RoF) applications, detection and frequency up-conversion of optical 5 MS/s, 16 quadrature amplitude modulation (QAM) signals into the 30 GHz band is successfully performed. We believe this is the first report of using CMOS-compatible photodetectors for RoF applications.",

author = "Kang, {Hyo Soon} and Choi, {Woo Young}",

year = "2006",

doi = "10.1109/MWP.2006.346512",

language = "English",

isbn = "1424402034",

series = "2006 International Topical Meeting on Microwave Photonics, MWP",

booktitle = "2006 International Topical Meeting on Microwave Photonics, MWP",

note = "2006 International Topical Meeting on Microwave Photonics, MWP ; Conference date: 03-10-2006 Through 06-10-2006",

}

Kang, HS & Choi, WY 2006, Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors. in 2006 International Topical Meeting on Microwave Photonics, MWP., 4153814, 2006 International Topical Meeting on Microwave Photonics, MWP, 2006 International Topical Meeting on Microwave Photonics, MWP, Grenoble, France, 06/10/3. https://doi.org/10.1109/MWP.2006.346512

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T1 - Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors

AU - Kang, Hyo Soon

AU - Choi, Woo Young

PY - 2006

Y1 - 2006

N2 - We present millimeter-wave optoelectronic mixers based on Si photodetectors fabricated by the standard 130 nm complementary metal-oxide-semiconductor (CMOS) process. The photodetector and optoelectronic mixer characteristics are investigated in order to optimize their performances. Using the avalanche process in photodetectors at high reverse bias voltages, efficient optoelectronic mixing with low conversion loss at 30 GHz band is obtained. In order to demonstrate the feasibility of applying this mixer for Radio-on-fiber (RoF) applications, detection and frequency up-conversion of optical 5 MS/s, 16 quadrature amplitude modulation (QAM) signals into the 30 GHz band is successfully performed. We believe this is the first report of using CMOS-compatible photodetectors for RoF applications.

AB - We present millimeter-wave optoelectronic mixers based on Si photodetectors fabricated by the standard 130 nm complementary metal-oxide-semiconductor (CMOS) process. The photodetector and optoelectronic mixer characteristics are investigated in order to optimize their performances. Using the avalanche process in photodetectors at high reverse bias voltages, efficient optoelectronic mixing with low conversion loss at 30 GHz band is obtained. In order to demonstrate the feasibility of applying this mixer for Radio-on-fiber (RoF) applications, detection and frequency up-conversion of optical 5 MS/s, 16 quadrature amplitude modulation (QAM) signals into the 30 GHz band is successfully performed. We believe this is the first report of using CMOS-compatible photodetectors for RoF applications.

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DO - 10.1109/MWP.2006.346512

M3 - Conference contribution

AN - SCOPUS:50049130576

SN - 1424402034

SN - 9781424402038

T3 - 2006 International Topical Meeting on Microwave Photonics, MWP

BT - 2006 International Topical Meeting on Microwave Photonics, MWP

T2 - 2006 International Topical Meeting on Microwave Photonics, MWP

Y2 - 3 October 2006 through 6 October 2006

ER -

Millimeter-wave optoelectronic mixers based on CMOS-compatible Si photodetectors

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