This is the first report on the fabrication of AlGaN/GaN HFETs which has a recessed gate structure achieved by the photoelectrochemical etching technique. Optimal photoelectrochemical wet etching conditions were stabilized and applied for the device fabrication. The DC and large-signal RF performance of thus fabricated device is presented as well. The ohmic contacts fabricated on the n+-GaN layer exhibited contact resistivity of mid 10-6 Ω cm2 and resulted in a linear I - V characteristics during an operation of device. The maximum drain-source current density is approximately 174 mA mm-1 (at VGS = 1 V), and the transconductance of approximately 68 mS mm-1 (at VGS = -1.1 V, VDS = 6 V). The maximum frequency is measured to be approximately 31 GHz, and an RF power of 84 mW mm-1 at 1.8 GHz for a 1400-μm wide gate device.
|Number of pages||4|
|Journal||Materials Science and Engineering B: Solid-State Materials for Advanced Technology|
|Publication status||Published - 2002 Jul 1|
Bibliographical noteFunding Information:
This work was financially supported from the Ministry of Commerce, Industry, and Energy (# 990-02-03) in Korea.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering