Abstract
The Microstructure and microwave dielectric properties of Bi 2O3-deficient Bi12SiO20 ceramics were investigated. A small amount of unreacted Bi2O3 phase melted during sintering at 825°C and assisted with densification and grain growth in all samples. The melted Bi2O3 reacted with remnant SiO2 during cooling to form a Bi4Si 3O12 secondary phase. The nominal composition of Bi 11.8SiO19.7 ceramics sintered at 825°C for 4 h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: εr = 39, Q × f = 74 000 GHz, and τf = -14.1 ppm/°C. Moreover, this ceramic did not react with Ag at 825°C.
Original language | English |
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Pages (from-to) | 2225-2229 |
Number of pages | 5 |
Journal | Journal of the American Ceramic Society |
Volume | 96 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2013 Jul |
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry