Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

Seongheum Choi; Jinyong Kim; Juyun Choi; Sungkil Cho; Minhyeong Lee; Eunjung Ko; Il Cheol Rho; Choon Hwan Kim; Yunseok Kim; Dae Hong Ko; Hyoungsub Kim

doi:10.1016/j.mee.2016.08.003

Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

Seongheum Choi, Jinyong Kim, Juyun Choi, Sungkil Cho, Minhyeong Lee, Eunjung Ko, Il Cheol Rho, Choon Hwan Kim, Yunseok Kim, Dae Hong Ko, Hyoungsub Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400–800 °C). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Microelectronic Engineering
Volume	165
DOIs	https://doi.org/10.1016/j.mee.2016.08.003
Publication status	Published - 2016 Nov 1

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2016.08.003

Cite this

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title = "Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer",

abstract = "As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400–800 °C). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration.",

author = "Seongheum Choi and Jinyong Kim and Juyun Choi and Sungkil Cho and Minhyeong Lee and Eunjung Ko and Rho, {Il Cheol} and Kim, {Choon Hwan} and Yunseok Kim and Ko, {Dae Hong} and Hyoungsub Kim",

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doi = "10.1016/j.mee.2016.08.003",

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T1 - Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

AU - Choi, Seongheum

AU - Kim, Jinyong

AU - Choi, Juyun

AU - Cho, Sungkil

AU - Lee, Minhyeong

AU - Ko, Eunjung

AU - Rho, Il Cheol

AU - Kim, Choon Hwan

AU - Kim, Yunseok

AU - Ko, Dae Hong

AU - Kim, Hyoungsub

PY - 2016/11/1

Y1 - 2016/11/1

N2 - As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400–800 °C). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration.

AB - As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400–800 °C). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration.

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SP - 1

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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