Metal-insulator transitions (MITs) (resistive switching) is an important research area. The underlying mechanisms are complex and have not been completely understood. Two or more different transitions can be induced simultaneously. Thus, to better understand the mechanisms of MITs for a specific material, it is necessary to design criteria for differentiating between transition mechanisms. Here, we studied resistive switching in Mott and Anderson insulators. These insulators (exhibiting Mott and Anderson resistive switching) were distinguished based on their properties. In Anderson insulators, electron states are localised at the Fermi level without a band gap, and resistivity is given by ln ρ = AT–1/4 within a certain range of temperatures. However, in Mott insulators, the Fermi level features a band gap, and ln ρ does not linearly depend on T–1/4. Therefore, optical conductivity, which can predict materials’ band gaps and resistivity-temperature characteristics, can be used for distinguishing between Mott and Anderson types of resistive switching.
|Number of pages||12|
|Journal||International Journal of Nanotechnology|
|Publication status||Published - 2018|
Bibliographical noteFunding Information:
This work was supported by the Ministry of Trade, Industry & Energy (MOTIE, South Korea) under Industrial Strategic Technology Development Program. No. 10068075, “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”. Yue Wang would like to thank the China Scholarship Council for financial support.
Copyright © 2018 Inderscience Enterprises Ltd.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry