Metalorganic chemical vapor deposition of TiO₂:N anatase thin film on Si substrate

Titanium dioxide thin film doped with nitrogen was deposited at 420°C on p-type silicon substrate by metalorganic chemical vapor deposition using titanium tetra-isopropoxide and nitrous oxide. From an x-ray diffraction result, when deposited at 420°C, only the anatase (101) peak and (200) peak were observed. Raman spectroscopy confirmed the presence of anatase phase without any rutile or TiN phase. X-ray photoelectron spectrum revealed that nitrogen was doped into the lattice of TiO₂ anatase. In the bulk of the film nitrogen peak was observed, and the spectrum of Ti 2p core level confirmed titanium-nitrogen bonding due to nitrogen incorporation into the anatase lattice.