Metal-germanium-metal photodetectors on heteroepitaxial Ge-on-Si with amorphous Ge Schottky barrier enhancement layers

Physics

• Metal 100%
• Optoelectronics 75%
• Optical Device 50%
• Optoelectronic Device 50%
• Photometer 50%
• Optical Communication 25%
• Ultrahigh Vacuum 25%
• Germanium 25%
• Integrated Circuit 25%
• Circuits 25%
• Cold Surfaces 25%
• Substrates 25%
• Utilization 25%
• Impact 25%

Engineering

• Photodetector 50%
• Epitaxial Film 50%
• Schottky Barrier 50%
• Deposition System 25%
• Integrated Circuit 25%
• Networks (Circuits) 25%
• Enhancement Layer 25%
• Cold Wall 25%
• Substrates 25%
• Applications 25%
• Integration 25%
• Photonics Device 25%

Material Science

• Epitaxial Layer 50%
• Amorphous Material 25%