Memory effects based on random networks of single-walled carbon nanotubes

Keun Woo Lee; Kon Yi Heo; Kyung Min Kim; Hyun Jae Kim

doi:10.1088/0957-4484/20/40/405210

Memory effects based on random networks of single-walled carbon nanotubes

Keun Woo Lee, Kon Yi Heo, Kyung Min Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have fabricated memory devices based on random networks of single-walled carbon nanotubes (SWNTs) on a glass substrate. The characteristics of the nonvolatile memory were investigated as a function of gate voltage, pulse time, and temperature. The program/erase window was greater than approximately 3.2V. The gate voltage sensitivity of the erase speed was greater (∼1.9 times) than that of the program speed. The activation energy was about 0.273eV. The mechanism could be explained from the polarization of water molecules, and may provide an important insight into the program/erase operation of memory devices. We have also discussed a fast erase speed due to a work function difference and oxide trapped charges.

Original language	English
Article number	405210
Journal	Nanotechnology
Volume	20
Issue number	40
DOIs	https://doi.org/10.1088/0957-4484/20/40/405210
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/20/40/405210

Cite this

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abstract = "We have fabricated memory devices based on random networks of single-walled carbon nanotubes (SWNTs) on a glass substrate. The characteristics of the nonvolatile memory were investigated as a function of gate voltage, pulse time, and temperature. The program/erase window was greater than approximately 3.2V. The gate voltage sensitivity of the erase speed was greater (∼1.9 times) than that of the program speed. The activation energy was about 0.273eV. The mechanism could be explained from the polarization of water molecules, and may provide an important insight into the program/erase operation of memory devices. We have also discussed a fast erase speed due to a work function difference and oxide trapped charges.",

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AU - Lee, Keun Woo

AU - Heo, Kon Yi

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AB - We have fabricated memory devices based on random networks of single-walled carbon nanotubes (SWNTs) on a glass substrate. The characteristics of the nonvolatile memory were investigated as a function of gate voltage, pulse time, and temperature. The program/erase window was greater than approximately 3.2V. The gate voltage sensitivity of the erase speed was greater (∼1.9 times) than that of the program speed. The activation energy was about 0.273eV. The mechanism could be explained from the polarization of water molecules, and may provide an important insight into the program/erase operation of memory devices. We have also discussed a fast erase speed due to a work function difference and oxide trapped charges.

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Memory effects based on random networks of single-walled carbon nanotubes

Abstract

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