Memory effect in an aluminum single-electron floating-node memory cell

Jinhee Kim, Sangchul Oh, Kyung Hwa Yoo, Jong Wan Park, Jeong O. Lee, Jung Bum Choi, Se Il Park, Ju Jin Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We have observed a memory effect in an aluminum single-electron memory cell with a floating node. Electrons were injected to or emitted from the floating node by field emission, which was evidenced by the sudden change in the Coulomb oscillation of a single-electron transistor. With the compensating voltage applied to the back gate, the Coulomb oscillation could be completely suppressed if the gate voltage sweep direction was reversed. We found that the Coulomb-oscillation period changed with the ratio of control-gate to back-gate voltage, being fitted well to the expected formula.

Original languageEnglish
Pages (from-to)4826-4829
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number8
Publication statusPublished - 2000 Aug

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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