TY - GEN
T1 - Memory characteristics of multilayer structures with lanthanum-aluminate charge trap by Fowler-Nordheim tunneling
AU - Cha, Seung Yong
AU - Kim, Hyo June
AU - Choi, Doo Jin
PY - 2010
Y1 - 2010
N2 - Charge Trap Flash(CTF) memory device is the replace candidate for NAND Flash devices. In this study, we fabricated Pt/Al2O 3/LaAlO3/SiO2/Si structures with various tunnel oxide thicknesses. The memory windows of the multilayer structures were about 3V, which is sufficient for memory application in low program/erase voltages. Reliability test showed threshold voltage change of less than 10% under 10 4 cycles of program/erase pulses. The I-V measurement of the capacitor structure indicated about 10-4A/cm2 of leakage current at 1V.
AB - Charge Trap Flash(CTF) memory device is the replace candidate for NAND Flash devices. In this study, we fabricated Pt/Al2O 3/LaAlO3/SiO2/Si structures with various tunnel oxide thicknesses. The memory windows of the multilayer structures were about 3V, which is sufficient for memory application in low program/erase voltages. Reliability test showed threshold voltage change of less than 10% under 10 4 cycles of program/erase pulses. The I-V measurement of the capacitor structure indicated about 10-4A/cm2 of leakage current at 1V.
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U2 - 10.1109/INEC.2010.5424946
DO - 10.1109/INEC.2010.5424946
M3 - Conference contribution
AN - SCOPUS:77951657871
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1210
EP - 1211
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -