Mechanically Flexible Nonvolatile Field Effect Transistor Memories with Ferroelectric Polymers

Richard H. Kim, Cheolmin Park

Research output: Chapter in Book/Report/Conference proceedingChapter


Great efforts have been devoted to improve the properties of nonvolatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.

Original languageEnglish
Title of host publicationTopics in Applied Physics
Number of pages26
Publication statusPublished - 2020

Publication series

NameTopics in Applied Physics
ISSN (Print)0303-4216
ISSN (Electronic)1437-0859

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No.2014R1A2A1A01005046).

Publisher Copyright:
© 2020, Springer Nature Singapore Pte Ltd.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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