Mechanically Flexible Nonvolatile Field Effect Transistor Memories with Ferroelectric Polymers

Richard H. Kim; Cheolmin Park

doi:10.1007/978-981-15-1212-4_13

Mechanically Flexible Nonvolatile Field Effect Transistor Memories with Ferroelectric Polymers

Richard H. Kim, Cheolmin Park

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Great efforts have been devoted to improve the properties of nonvolatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.

Original language	English
Title of host publication	Topics in Applied Physics
Publisher	Springer
Pages	265-290
Number of pages	26
DOIs	https://doi.org/10.1007/978-981-15-1212-4_13
Publication status	Published - 2020

Publication series

Name	Topics in Applied Physics
Volume	131
ISSN (Print)	0303-4216
ISSN (Electronic)	1437-0859

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No.2014R1A2A1A01005046).

Publisher Copyright:
© 2020, Springer Nature Singapore Pte Ltd.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1007/978-981-15-1212-4_13

Cite this

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abstract = "Great efforts have been devoted to improve the properties of nonvolatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.",

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AB - Great efforts have been devoted to improve the properties of nonvolatile memory with field effect transistor architecture containing ferroelectric polymers (NV-FeFETs) due to the potential advantages of the ferroelectric polymers including their low cost, easy fabrication based on solution processes, and mechanical flexibility. Here, we review the current status of development in particular on mechanically flexible NV-FeFETs. In addition, recent researches that demonstrate the importance of the analysis techniques to characterize the mechanical properties of thin films composing a FeFET are discussed, including nano-indentation and nano-scratch test.

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Mechanically Flexible Nonvolatile Field Effect Transistor Memories with Ferroelectric Polymers

Abstract

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