Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation

For the applications of next generation display, various types of thin-film transistors (TFTs) are actively researched. Among them, the indium‑gallium‑zinc-oxide (IGZO) TFTs are being focused because of its transparency and other great electrical properties. However, the effect of mechanical stress on amorphous IGZO (a-IGZO) TFTs has to be studied for the foldable display application. In this paper, we examine the reliability of mechanical stress on a-IGZO TFTs and report the degradation mechanism by analyzing sub-gap density of states (DOSs) extracted from the stress simulation model. The simulation model has been implemented through TCAD simulation tool and the electrical characteristics based on the extracted parameters are compared with the measured data.