Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent

Byung Kwon Kang; Yoon Ho Park; Seok Lee; Sang Sam Choi; Jungkeun Lee; Takeshi Kamiya; Seung Han Park

doi:10.1109/68.910505

Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent

Byung Kwon Kang, Yoon Ho Park, Seok Lee, Sang Sam Choi, Jungkeun Lee, Takeshi Kamiya, Seung Han Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A new method to measure the facet reflectivity of an antireflection (AR)-coated electroabsorption (EA) modulator in the region of operating wavelengths is proposed. First, by measuring induced photocurrent and reflectance simultaneously at the front facet of an EA waveguide, the cleaved facet reflectivity and propagation loss are determined. After coating the facet with AR, the residual reflectivity of AR-coated facet is obtained from the measured photocurrent spectra and the predetermined facet reflectivity. We demonstrate the reflectivity of a double- layer AR-coated EA modulator can be measured to be ∼4 × 10^-4 at 1.55 μm for TE polarization by using the proposed technique.

Original language	English
Pages (from-to)	112-114
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1109/68.910505
Publication status	Published - 2001 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/68.910505

Cite this

@article{1ad1f4f1effd45b598eef50063d9ca92,

title = "Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent",

abstract = "A new method to measure the facet reflectivity of an antireflection (AR)-coated electroabsorption (EA) modulator in the region of operating wavelengths is proposed. First, by measuring induced photocurrent and reflectance simultaneously at the front facet of an EA waveguide, the cleaved facet reflectivity and propagation loss are determined. After coating the facet with AR, the residual reflectivity of AR-coated facet is obtained from the measured photocurrent spectra and the predetermined facet reflectivity. We demonstrate the reflectivity of a double- layer AR-coated EA modulator can be measured to be ∼4 × 10-4 at 1.55 μm for TE polarization by using the proposed technique.",

author = "Kang, {Byung Kwon} and Park, {Yoon Ho} and Seok Lee and Choi, {Sang Sam} and Jungkeun Lee and Takeshi Kamiya and Park, {Seung Han}",

year = "2001",

month = feb,

doi = "10.1109/68.910505",

language = "English",

volume = "13",

pages = "112--114",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent

AU - Kang, Byung Kwon

AU - Park, Yoon Ho

AU - Lee, Seok

AU - Choi, Sang Sam

AU - Lee, Jungkeun

AU - Kamiya, Takeshi

AU - Park, Seung Han

PY - 2001/2

Y1 - 2001/2

N2 - A new method to measure the facet reflectivity of an antireflection (AR)-coated electroabsorption (EA) modulator in the region of operating wavelengths is proposed. First, by measuring induced photocurrent and reflectance simultaneously at the front facet of an EA waveguide, the cleaved facet reflectivity and propagation loss are determined. After coating the facet with AR, the residual reflectivity of AR-coated facet is obtained from the measured photocurrent spectra and the predetermined facet reflectivity. We demonstrate the reflectivity of a double- layer AR-coated EA modulator can be measured to be ∼4 × 10-4 at 1.55 μm for TE polarization by using the proposed technique.

AB - A new method to measure the facet reflectivity of an antireflection (AR)-coated electroabsorption (EA) modulator in the region of operating wavelengths is proposed. First, by measuring induced photocurrent and reflectance simultaneously at the front facet of an EA waveguide, the cleaved facet reflectivity and propagation loss are determined. After coating the facet with AR, the residual reflectivity of AR-coated facet is obtained from the measured photocurrent spectra and the predetermined facet reflectivity. We demonstrate the reflectivity of a double- layer AR-coated EA modulator can be measured to be ∼4 × 10-4 at 1.55 μm for TE polarization by using the proposed technique.

UR - http://www.scopus.com/inward/record.url?scp=0035246457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035246457&partnerID=8YFLogxK

U2 - 10.1109/68.910505

DO - 10.1109/68.910505

M3 - Article

AN - SCOPUS:0035246457

SN - 1041-1135

VL - 13

SP - 112

EP - 114

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

Measurement of facet reflectivity of antireflection-coated electroabsorption modulator using induced photocurrent

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this