MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers

W. Y. Choi; T. P.E. Broekaert; C. G. Fonstad

doi:10.1049/el:19930323

MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers

W. Y. Choi, T. P.E. Broekaert, C. G. Fonstad

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAIAs materials lattice-matched to InP. A 3nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.

Original language	English
Pages (from-to)	483-485
Number of pages	3
Journal	Electronics Letters
Volume	29
Issue number	5
DOIs	https://doi.org/10.1049/el:19930323
Publication status	Published - 1993 Mar

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19930323

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title = "MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers",

abstract = "Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAIAs materials lattice-matched to InP. A 3nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.",

author = "Choi, {W. Y.} and Broekaert, {T. P.E.} and Fonstad, {C. G.}",

year = "1993",

month = mar,

doi = "10.1049/el:19930323",

language = "English",

volume = "29",

pages = "483--485",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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AU - Choi, W. Y.

AU - Broekaert, T. P.E.

AU - Fonstad, C. G.

PY - 1993/3

Y1 - 1993/3

N2 - Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAIAs materials lattice-matched to InP. A 3nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.

AB - Ridge waveguide multiple quantum well laser diodes in which the ridge heights are predetermined by etch stop layers have been fabricated for the first time in InGaAIAs materials lattice-matched to InP. A 3nm thick pseudomorphic AlAs layer forms the etch stop layer in these devices and the selective etching was performed by a succinic acid solution that etches InGaAs and InAlAs but not AlAs. With this technique, more reliable and uniform ridge stripe device fabrication is expected.

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JO - Electronics Letters

JF - Electronics Letters

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ER -

MBE-grown InGaAIAs 1-5µm MQW ridge waveguide laser diodes with AlAs etch stop layers

Abstract

All Science Journal Classification (ASJC) codes

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