Abstract
The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/ GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots.
Original language | English |
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Pages (from-to) | 2885-2887 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 21 |
DOIs | |
Publication status | Published - 1997 May 26 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)