The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/ GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolved photoluminescence spectra, in addition to the interaction of the carriers in quantum dots with the remote ionized impurities in a GaAs barrier, the screening due to the two-dimensional charges is found to mainly affect the carrier lifetime in the modulation-doped quantum dots.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1997 May 26|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)