@inproceedings{4db4a17eb3c745cea13a0d64b29daaf2,
title = "Manufacturing of TFTs with high deposition rated microcrystalline silicon using plasma enhanced chemical vapor deposition",
abstract = "Microcrystalline silicon was deposited on glass by standard plasma enhanced chemical vapor deposition using H2 diluted SiH4, Raman spectroscopy indicated a crystalline volume fraction of as high as 40% in films deposited at a substrate temperature 350°C The deposition rate in films was as high as 10{\AA}/sec. This process produced μc-Si TFTs with both an electron mobility of 10.9cm2/Vs, a threshold voltage of 1.2V, a subthreshold slop of 0.5V/dec at n-channel TFTs and a hole mobility of 3.2cm2/Vs, a threshold voltage of -5V, a subthreshold slop of 0.42V/dec at p-channel TFTs without post-fabrication annealing.",
author = "Park, {Kyung Bae} and Jung, {Ji Sim} and Kim, {Jong Man} and Ryu, {Myung Kwan} and Lee, {Sang Yoon} and Kwon, {Jang Yeon}",
year = "2007",
doi = "10.1557/proc-0989-a17-02",
language = "English",
isbn = "9781558999497",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "399--403",
booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007",
address = "United States",
note = "2007 MRS Spring Meeting ; Conference date: 09-04-2007 Through 13-04-2007",
}